IXFR10N100F Datasheet and Replacement. Cross Reference Search

..1. Size:97K ixys
ixfr10n100f ixfr12n100f.pdf pdf_icon

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 12N100F 1000 V 10 A 1.05 ISOPLUS247TMIXFR 10N100F 1000 V 9 A 1.20 F-Class: MegaHertz Switching trr 250 ns (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesPreliminary Data SheetSymbol

4.1. Size:33K ixys
ixfr10n100q ixfr12n100q.pdf pdf_icon

Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 12N100Q 1000 V 10 A 1.05 WISOPLUS247TM Q CLASSIXFR 10N100Q 1000 V 9 A 1.20 W(Electrically Isolated Back Surface) trr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 1000 V

8.1. Size:151K ixys
ixfr102n30p.pdf pdf_icon

VDSS = 300 VIXFR 102N30PPolarHTTM HiPerFETID25 = 60 APower MOSFET RDS(on) 36 m (Electrically Isolated Back Surface)trr 200 nsN-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 150 C 300 VE153432VDGR TJ = 25 C to 1

9.1. Size:152K ixys
ixfr180n15p.pdf pdf_icon

IXFR 180N15P VDSS = 150 VPolarHVTM HiPerFETID25 = 100 APower MOSFET RDS(on) 13 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 175 C 150 V E153432VDGR TJ

9.2. Size:33K ixys
ixfr180n10.pdf pdf_icon

HiPerFETTM Power MOSFETsIXFR 180N10 VDSS = 100 VISOPLUS247TMID25 = 165 A(Electrically Isolated Back Surface) RDS(on)= 8 mWtrr 250 nsSingle MOSFET DiePreliminary dataSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 VVGS Continuous 20 VGVGSM Transient 30 VDIsolated back surface*ID25

9.3. Size:57K ixys
ixfr180n085.pdf pdf_icon

HiPerFETTM Power MOSFETsIXFR 180N085 VDSS = 85 VISOPLUS247TMID25 = 180 A(Electrically Isolated Back Surface)RDS(on)= 7 mWtrr 250 nsSingle MOSFET DiePreliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C85 VVDGR TJ = 25C to 150C; RGS = 1 MW 85 VVGS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25C

9.4. Size:74K ixys
ixfr120n20.pdf pdf_icon

IXFR 120N20 VDSS = 200 VHiPerFETTM Power MOSFETsID25 = 105 AISOPLUS247TMRDS(on) = 17 m(Electrically Isolated Back Surface) trr 250 ns Single MOSFET DiePreliminary Data SheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VGVGS Continuo

9.5. Size:32K ixys
ixfr180n07.pdf pdf_icon

HiPerFETTM Power MOSFETsIXFR 180N07 VDSS = 70 VISOPLUS247TMID25 = 180 A(Electrically Isolated Back Surface)RDS(on)= 6 mWtrr 250 nsSingle MOSFET DiePreliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C70 VVDGR TJ = 25C to 150C; RGS = 1 MW 70 VGVGS Continuous 20 VDVGSM Transient 30 VIsolated back surface*ID

9.6. Size:32K ixys
ixfr15n80q.pdf pdf_icon

HiPerFETTM Power MOSFETsIXFR 15N80Q VDSS = 800 VISOPLUS247TM Q ClassID25 = 13 ARDS(on) = 0.60 W(Electrically Isolated Back Surface)N-Channel Enhancement Modetrr 250 nsAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesPreliminary dataSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 V

9.7. Size:139K ixys
ixfr140n20p.pdf pdf_icon

VDSS = 200 VIXFR 140N20PPolarHTTM HiPerFETID25 = 90 APower MOSFET RDS(on) 22 m ISOPLUS247TM trr 200 ns (Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 175 C 200 VE153432VDGR

IXFR10N100F Datasheet (PDF)

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