IXFQ34N50P3 Datasheet. Specs and Replacement

Type Designator: IXFQ34N50P3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 695 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO-3P

IXFQ34N50P3 substitution

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IXFQ34N50P3 datasheet

 ..1. Size:129K  ixys
 ixfh34n50p3 ixfq34n50p3.pdf pdf_icon

IXFQ34N50P3

Preliminary Technical Information Polar3TM HiperFETTM VDSS = 500V IXFQ34N50P3 ID25 = 34A Power MOSFETs IXFH34N50P3 RDS(on) 170m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings S Tab VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V TO-247 ... See More ⇒

 9.1. Size:185K  ixys
 ixfh30n60x ixfq30n60x ixft30n60x.pdf pdf_icon

IXFQ34N50P3

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT30N60X Power MOSFET ID25 = 30A IXFQ30N60X RDS(on) 155m IXFH30N60X TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150... See More ⇒

Detailed specifications: IXFR44N50Q3, IXFR27N80Q, IXFR24N100Q3, IXFR12N100F, IXFR10N100F, IXFQ94N30P3, IXFQ60N60X, IXFQ50N60X, IRF740, IXFQ30N60X, IXFQ26N50P3, IXFQ24N60X, IXFQ20N50P3, IXFP8N50P3, IXFP7N60P3, IXFP5N50P3, IXFP5N100PM

Keywords - IXFQ34N50P3 MOSFET specs

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