IXFP14N60P3 PDF and Equivalents Search

 

IXFP14N60P3 Specs and Replacement

Type Designator: IXFP14N60P3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 327 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 178 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm

Package: TO-220AB

IXFP14N60P3 substitution

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IXFP14N60P3 datasheet

 ..1. Size:180K  ixys
 ixfp14n60p3.pdf pdf_icon

IXFP14N60P3

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 RDS(on) 540m IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15... See More ⇒

 4.1. Size:257K  ixys
 ixfa14n60p ixfh14n60p ixfp14n60p.pdf pdf_icon

IXFP14N60P3

IXFA 14N60P VDSS = 600 V PolarHVTM HiPerFET IXFH 14N60P ID25 = 14 A Power MOSFET IXFP 14N60P RDS(on) 550 m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V S (TAB) VGS Continuous 30 V V... See More ⇒

 9.1. Size:252K  ixys
 ixfa16n50p ixfh16n50p ixfp16n50p.pdf pdf_icon

IXFP14N60P3

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) 400 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V ... See More ⇒

 9.2. Size:278K  ixys
 ixfp12n65x2m ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf pdf_icon

IXFP14N60P3

X2-Class HiPERFET VDSS = 650V IXFA12N65X2 Power MOSFET ID25 = 12A IXFP12N65X2 RDS(on) 310m IXFH12N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Tr... See More ⇒

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Detailed specifications: IXFP26N50P3 , IXFP24N60X , IXFP22N65X2 , IXFP20N50P3M , IXFP20N50P3 , IXFP18N60X , IXFP16N60P3 , IXFP16N50P3 , 2N7000 , IXFN94N50P2 , IXFN55N50F , IXFN40N110Q3 , IXFN260N17T , IXFN210N30P3 , IXFN200N06 , IXFL210N30P3 , IXFL132N50P3 .

Keywords - IXFP14N60P3 MOSFET specs

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