All MOSFET. IXFP14N60P3 Datasheet

 

IXFP14N60P3 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFP14N60P3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 327 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 178 pF

Maximum Drain-Source On-State Resistance (Rds): 0.54 Ohm

Package: TO-220AB

IXFP14N60P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFP14N60P3 Datasheet (PDF)

1.1. ixfa14n60p ixfh14n60p ixfp14n60p.pdf Size:257K _ixys

IXFP14N60P3
IXFP14N60P3

IXFA 14N60P VDSS = 600 V PolarHVTM HiPerFET IXFH 14N60P ID25 = 14 A Power MOSFET ? ? IXFP 14N60P RDS(on) ? 550 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V S (TAB) VGS Continuous 30 V VGSM Tranisent 40 V TO-247 (I

1.2. ixfp14n60p3.pdf Size:180K _ixys

IXFP14N60P3
IXFP14N60P3

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 540mΩ ≤ Ω ≤ Ω IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 15

 5.1. ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf Size:166K _ixys

IXFP14N60P3
IXFP14N60P3

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA16N60P3 Power MOSFETs ID25 = 16A IXFP16N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 440mΩ ≤ Ω ≤ Ω IXFH16N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 15

5.2. ixfa110n15t2 ixfp110n15t2.pdf Size:204K _ixys

IXFP14N60P3
IXFP14N60P3

Preliminary Technical Information TrenchT2TM HiperFET VDSS = 150V IXFA110N15T2 ID25 = 110A Power MOSFET IXFP110N15T2 ? ? RDS(on) ? ? ? 13m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25C to 175C 150 V (TAB) VDGR TJ = 25C to 175C, RGS = 1M? 150 V TO-220 VGSS Continuous 20 V VGSM Transient 30 V ID25 TC

 5.3. ixfa180n10t2 ixfp180n10t2.pdf Size:208K _ixys

IXFP14N60P3
IXFP14N60P3

Preliminary Technical Information TrenchT2TM HiperFETTM VDSS = 100V IXFA180N10T2 Power MOSFET ID25 = 180A IXFP180N10T2 ? ? RDS(on) ? ? ? 6m? ? ? ? ? N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V TO-220AB (IXFP) VDGR TJ = 25C to 175C, RGS = 1M? 100 V VGSS Co

5.4. ixfa16n50p ixfh16n50p ixfp16n50p.pdf Size:252K _ixys

IXFP14N60P3
IXFP14N60P3

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) ? 400 m? ? ? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGS Continuous 30 V VGSM Transient 4

 5.5. ixfa18n60x ixfh18n60x ixfp18n60x.pdf Size:183K _ixys

IXFP14N60P3
IXFP14N60P3

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA18N60X Power MOSFET ID25 = 18A IXFP18N60X   RDS(on)    230m     IXFH18N60X TO-263 AA (IXFA) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to

5.6. ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf Size:173K _ixys

IXFP14N60P3
IXFP14N60P3

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA16N50P3 Power MOSFETs ID25 = 16A IXFP16N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 360mΩ ≤ Ω ≤ Ω IXFH16N50P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 15

Datasheet: IXFP26N50P3 , IXFP24N60X , IXFP22N65X2 , IXFP20N50P3M , IXFP20N50P3 , IXFP18N60X , IXFP16N60P3 , IXFP16N50P3 , IRFB3306 , IXFN94N50P2 , IXFN55N50F , IXFN40N110Q3 , IXFN260N17T , IXFN210N30P3 , IXFN200N06 , IXFL210N30P3 , IXFL132N50P3 .

Back to Top

 


IXFP14N60P3
  IXFP14N60P3
  IXFP14N60P3
 

social 

LIST

Last Update

MOSFET: STF11NM65N | STF11NM60N | STF11N65M5 | STF11N65M2 | STF11N50M2 | STF110N10F7 | STF10P6F6 | STF10N95K5 | STF10N80K5 | STF10N60M2 | STF10N105K5 | STF100N10F7 | STE88N65M5 | STE145N65M5 | STE139N65M5 |

 

 

Back to Top