All MOSFET. IXFN40N110Q3 Datasheet

 

IXFN40N110Q3 Datasheet and Replacement


   Type Designator: IXFN40N110Q3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 960 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 300 nC
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 984 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: SOT-227B
 

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IXFN40N110Q3 Datasheet (PDF)

 ..1. Size:120K  ixys
 ixfn40n110q3.pdf pdf_icon

IXFN40N110Q3

Advance Technical InformationHiperFETTM VDSS = 1100VIXFN40N110Q3Power MOSFET ID25 = 35A Q3-Class RDS(on) 260m N-Channel Enhancement ModeFast Intrinsic RectifierminiBLOCE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 1100 VVDGR TJ = 25C to 150C, RGS = 1M 1100 VSVGSS Continuous 30 VDV

 7.1. Size:113K  ixys
 ixfn40n90p.pdf pdf_icon

IXFN40N110Q3

Preliminary Technical InformationPolarTM Power MOSFET VDSS = 900VIXFN40N90PID25 = 33AHiPerFETTM RDS(on) 210m N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227E153432VDSS TJ = 25C to 150C 900 VSVDGR TJ = 25C to 150C, RGS = 1

 9.1. Size:179K  ixys
 ixfn420n10t.pdf pdf_icon

IXFN40N110Q3

Advance Technical InformationGigaMOSTM Trench VDSS = 100VIXFN420N10THiperFETTM ID25 = 420A RDS(on) 2.3m Power MOSFETtrr 140nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227E153432Fast Intrinsic DiodeSGSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175

 9.2. Size:162K  ixys
 ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf pdf_icon

IXFN40N110Q3

VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C

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Datasheet: IXFP20N50P3M , IXFP20N50P3 , IXFP18N60X , IXFP16N60P3 , IXFP16N50P3 , IXFP14N60P3 , IXFN94N50P2 , IXFN55N50F , STP75NF75 , IXFN260N17T , IXFN210N30P3 , IXFN200N06 , IXFL210N30P3 , IXFL132N50P3 , IXFK90N60X , IXFK32N90P , IXFK30N50Q .

Keywords - IXFN40N110Q3 MOSFET datasheet

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