IXFN40N110Q3 MOSFET Datasheet: N-Ch, 1100V, 35A. Full specification with pinout and replacement list

IXFN40N110Q3 Specs and Replacement

Type Designator: IXFN40N110Q3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 960 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V

Qg ⓘ - Total Gate Charge: 300 nC

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 984 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: SOT-227B

IXFN40N110Q3 substitution

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IXFN40N110Q3 datasheet

..1. Size:120K ixys
ixfn40n110q3.pdf pdf_icon

Advance Technical Information HiperFETTM VDSS = 1100V IXFN40N110Q3 Power MOSFET ID25 = 35A Q3-Class RDS(on) 260m N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 1100 V VDGR TJ = 25 C to 150 C, RGS = 1M 1100 V S VGSS Continuous 30 V D V... See More ⇒

7.1. Size:113K ixys
ixfn40n90p.pdf pdf_icon

Preliminary Technical Information PolarTM Power MOSFET VDSS = 900V IXFN40N90P ID25 = 33A HiPerFETTM RDS(on) 210m N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 E153432 VDSS TJ = 25 C to 150 C 900 V S VDGR TJ = 25 C to 150 C, RGS = 1... See More ⇒

9.1. Size:179K ixys
ixfn420n10t.pdf pdf_icon

Advance Technical Information GigaMOSTM Trench VDSS = 100V IXFN420N10T HiperFETTM ID25 = 420A RDS(on) 2.3m Power MOSFET trr 140ns N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Fast Intrinsic Diode S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 ... See More ⇒

9.2. Size:162K ixys
ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C ... See More ⇒