IXFN200N06 MOSFET Datasheet: N-Ch, 60V, 200A. Full specification with pinout and replacement list

IXFN200N06 Specs and Replacement

Type Designator: IXFN200N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 4000 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: SOT-227B

IXFN200N06 substitution

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IXFN200N06 datasheet

..1. Size:94K ixys
ixfn200n06 ixfn200n07.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFN 200 N06 60 V 200 A 6 m Power MOSFETs IXFN 200 N07 70 V 200 A 6 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C N07 70 V VDGR TJ = 25 C to 150 C; RGS ... See More ⇒

..2. Size:190K ixys
ixfn180n07 ixfn200n07 ixfn200n06.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFN 200 N06 60 V 200 A 6 mW Power MOSFETs IXFN 180 N07 70 V 180 A 7 mW IXFN 200 N07 70 V 200 A 6 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr 250 ns Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C N07 70 V N06 60 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW N07 70 V G N06... See More ⇒

6.1. Size:86K ixys
ixfn200n10p.pdf pdf_icon

VDSS = 100 V IXFN 200N10P PolarTM HiPerFET ID25 = 200 A Power MOSFET RDS(on) 7.5 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 S VDSS TJ = 25 C to 175 C 100 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS C... See More ⇒

9.1. Size:283K 1
ixfn230n10.pdf pdf_icon