IXFK30N50Q MOSFET Datasheet: N-Ch, 500V, 30A. Full specification with pinout and replacement list

IXFK30N50Q Specs and Replacement

Type Designator: IXFK30N50Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 416 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V

Qg ⓘ - Total Gate Charge: 150 nC

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 640 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO-264AA

IXFK30N50Q substitution

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IXFK30N50Q datasheet

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IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 600 600 V G VDGR TJ = 25 C to 150 C; RGS = 1... See More ⇒