All MOSFET. IXFK210N17T Datasheet

 

IXFK210N17T MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFK210N17T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 170 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 210 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 285 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 2110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-264

 IXFK210N17T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFK210N17T Datasheet (PDF)

Datasheet: IXFN200N06 , IXFL210N30P3 , IXFL132N50P3 , IXFK90N60X , IXFK32N90P , IXFK30N50Q , IXFK260N17T , IXFK24N100Q3 , IRF1010E , IXFK150N30P3 , IXFK120N65X2 , IXFK120N30P3 , IXFK100N65X2 , IXFJ26N50P3 , IXFI7N80P , IXFH94N30T , IXFH94N30P3 .

 

 
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