IXFH30N60X PDF and Equivalents Search

 

IXFH30N60X Specs and Replacement

Type Designator: IXFH30N60X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 1610 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm

Package: TO-247

IXFH30N60X substitution

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IXFH30N60X datasheet

 ..1. Size:185K  ixys
ixfh30n60x ixfq30n60x ixft30n60x.pdf pdf_icon

IXFH30N60X

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT30N60X Power MOSFET ID25 = 30A IXFQ30N60X RDS(on) 155m IXFH30N60X TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150... See More ⇒

 5.1. Size:324K  ixys
ixfh30n60p ixfv30n60p ixft30n60p.pdf pdf_icon

IXFH30N60X

IXFH 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFT 30N60P ID25 = 30 A Power MOSFET IXFV 30N60P RDS(on) 240 m N-Channel Enhancement Mode IXFV 30N60PS trr 200 ns Fast Recovery Diode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS ... See More ⇒

 7.1. Size:320K  ixys
ixfh30n50p ixft30n50p ixfv30n50p.pdf pdf_icon

IXFH30N60X

VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET RDS(on) 200 m IXFV 30N50P N-Channel Enhancement Mode trr 200 ns IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V D (TAB) VDGR TJ = 25 C to ... See More ⇒

 7.2. Size:110K  ixys
ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf pdf_icon

IXFH30N60X

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC ... See More ⇒

Detailed specifications: IXFH60N65X2 , IXFH60N60X , IXFH50N60X , IXFH46N65X2 , IXFH46N30T , IXFH44N50Q3 , IXFH34N65X2 , IXFH34N50P3 , AO4407 , IXFH30N50Q , IXFH26N50P3 , IXFH24N60X , IXFH22N65X2 , IXFH20N50P3 , IXFH18N60X , IXFH18N100Q3 , IXFH16N60P3 .

Keywords - IXFH30N60X MOSFET specs

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