All MOSFET. IXFH18N100Q3 Datasheet

 

IXFH18N100Q3 Datasheet and Replacement


   Type Designator: IXFH18N100Q3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 830 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.66 Ohm
   Package: TO-247
 

 IXFH18N100Q3 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXFH18N100Q3 Datasheet (PDF)

 ..1. Size:130K  ixys
 ixfh18n100q3 ixft18n100q3.pdf pdf_icon

IXFH18N100Q3

Advance Technical InformationHiperFETTM VDSS = 1000VIXFT18N100Q3Power MOSFETs ID25 = 18AIXFH18N100Q3 Q3-Class RDS(on) 660m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VTO-247 (IXFH)VDGR TJ = 25C to 150C, RGS = 1M

 7.1. Size:336K  ixys
 ixfa18n65x2 ixfp18n65x2 ixfh18n65x2.pdf pdf_icon

IXFH18N100Q3

X2-Class HiPerFETTM VDSS = 650VIXFA18N65X2Power MOSFET ID25 = 18AIXFP18N65X2 RDS(on) 200m IXFH18N65X2N-Channel Enhancement ModeAvalanche RatedTO-263(IXFA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220VDSS TJ = 25C to 150C 650 V(IXFP)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVGS

 7.2. Size:183K  ixys
 ixfa18n60x ixfh18n60x ixfp18n60x.pdf pdf_icon

IXFH18N100Q3

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA18N60XPower MOSFET ID25 = 18AIXFP18N60X RDS(on) 230m IXFH18N60XTO-263 AA (IXFA)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to

 7.3. Size:172K  ixys
 ixfh18n60p ixfv18n60p.pdf pdf_icon

IXFH18N100Q3

IXFH 18N60P VDSS = 600 VPolarHVTM HiPerFETIXFV 18N60P ID25 = 18 APower MOSFET IXFV 18N60PS RDS(on) 400 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Co

SHOW MORE

Datasheet: IXFH34N50P3 , IXFH30N60X , IXFH30N50Q , IXFH26N50P3 , IXFH24N60X , IXFH22N65X2 , IXFH20N50P3 , IXFH18N60X , 13N50 , IXFH16N60P3 , IXFH16N50P3 , IXFH150N20T , IXFH14N60P3 , IXFH120N25T , IXFH10N100Q , IXFD80N10 , IXFC80N10 .

Keywords - IXFH18N100Q3 MOSFET datasheet

 IXFH18N100Q3 cross reference
 IXFH18N100Q3 equivalent finder
 IXFH18N100Q3 lookup
 IXFH18N100Q3 substitution
 IXFH18N100Q3 replacement

 

 
Back to Top

 


 
.