All MOSFET. IXFH16N50P3 Datasheet

 

IXFH16N50P3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFH16N50P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 193 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO-247

 IXFH16N50P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH16N50P3 Datasheet (PDF)

 ..1. Size:173K  ixys
 ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf

IXFH16N50P3 IXFH16N50P3

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFA16N50P3Power MOSFETs ID25 = 16AIXFP16N50P3 RDS(on) 360m IXFH16N50P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 15

 4.1. Size:252K  ixys
 ixfa16n50p ixfh16n50p ixfp16n50p.pdf

IXFH16N50P3 IXFH16N50P3

IXFA 16N50P VDSS = 500 VPolarHVTM HiPerFETIXFH 16N50P ID25 = 16 APower MOSFETIXFP 16N50P RDS(on) 400 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V

 7.1. Size:112K  ixys
 ixfh16n90 ixfx16n90.pdf

IXFH16N50P3 IXFH16N50P3

IXFH16N90 VDSS = 900 VHiPerFETTMIXFX16N90 ID25 = 16 APower MOSFETsRDS(on) = 0.65 WN-Channel Enhancement Modet 200 nsHigh dv/dt, Low t , HDMOSTM FamilyrrrrPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD(IXFH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 M 900 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 2

 7.2. Size:166K  ixys
 ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf

IXFH16N50P3 IXFH16N50P3

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFA16N60P3Power MOSFETs ID25 = 16AIXFP16N60P3 RDS(on) 440m IXFH16N60P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 15

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQA13N80F109

 

 
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