All MOSFET. IXFH150N20T Datasheet

 

IXFH150N20T MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFH150N20T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 890 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 150 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 177 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 1250 pF

Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm

Package: TO-247

IXFH150N20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH150N20T Datasheet (PDF)

1.1. ixfh150n20t ixft150n20t.pdf Size:180K _ixys

IXFH150N20T
IXFH150N20T

Advance Technical Information TrenchTM HiperFETTM VDSS = 200V IXFT150N20T Power MOSFETs ID25 = 150A IXFH150N20T ≤ Ω RDS(on) ≤ Ω ≤ 15mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 200 V TO-247 (IX

2.1. ixfh150n15p ixfk150n15p.pdf Size:252K _ixys

IXFH150N20T
IXFH150N20T

IXFH 150N15P PolarHTTM HiPerFET VDSS = 150 V IXFK 150N15P Power MOSFET ID25 = 150 A ≤ Ω RDS(on)≤ 13 mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode ≤ Ω Fast Intrinsic Diode ≤ trr ≤ 200 ns ≤ ≤ ≤ Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 150 V VGS Contin

 4.1. ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf Size:116K _ixys

IXFH150N20T
IXFH150N20T

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W Power MOSFETs IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet TO-247 AD Symbol Test Conditions Maximum Ratings (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V (TAB) VGS Continuous ±

4.2. ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Size:82K _ixys

IXFH150N20T
IXFH150N20T

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 2

 4.3. ixfh15n80q ixft15n80q.pdf Size:111K _ixys

IXFH150N20T
IXFH150N20T

IXFH 15N80Q VDSS = 800 V HiPerFETTM IXFT 15N80Q ID25 = 15 A Power MOSFETs RDS(on) = 0.60 W Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V VGS Continuous ±20 V VGSM Transient ±30 V (TAB) ID25 TC = 25°C15 A IDM

4.4. ixfh14n80 ixfh15n80.pdf Size:112K _ixys

IXFH150N20T
IXFH150N20T

HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode Ω Ω Ω Ω IXFH14N80 800 V 14 A 0.70 Ω High dv/dt, Low trr, HDMOSTM Family Ω Ω Ω Ω IXFH15N80 800 V 15 A 0.60 Ω ≤ trr ≤ ≤ 250 ns ≤ ≤ Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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