All MOSFET. IXFH10N100Q Datasheet

 

IXFH10N100Q Datasheet and Replacement


   Type Designator: IXFH10N100Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 122 nC
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-247AD
 

 IXFH10N100Q substitution

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IXFH10N100Q Datasheet (PDF)

 ..1. Size:568K  ixys
 ixfh10n100q.pdf pdf_icon

IXFH10N100Q

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFH/IXFM 12 N100 1000 V 12 A 1.05 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M

 ..2. Size:144K  ixys
 ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf pdf_icon

IXFH10N100Q

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETsIXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement ModeAvalanche RatedLow Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS

 4.1. Size:570K  ixys
 ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf pdf_icon

IXFH10N100Q

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFH/IXFM 12 N100 1000 V 12 A 1.05 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M

 7.1. Size:179K  ixys
 ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf pdf_icon

IXFH10N100Q

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETsIXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 1

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Keywords - IXFH10N100Q MOSFET datasheet

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