IPZ65R065C7 MOSFET Datasheet: N-Ch, 650V, 33A. Full specification with pinout and replacement list

IPZ65R065C7 Specs and Replacement

Type Designator: IPZ65R065C7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 171 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 48 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO-247-4

IPZ65R065C7 substitution

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IPZ65R065C7 datasheet

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPZ65R065C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPZ65R065C7 PG-TO 247-4 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPZ65R045C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPZ65R045C7 PG-TO 247-4 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPZ65R019C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPZ65R019C7 PG-TO 247-4 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPZ65R095C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPZ65R095C7 PG-TO 247-4 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

Detailed specifications: IXFA22N65X2 , IXFA22N60P3 , IXFA20N50P3 , IXFA18N60X , IXFA16N60P3 , IXFA16N50P3 , IXFA14N60P3 , IPZ65R095C7 , MMIS60R580P , IPZ65R045C7 , IPZ65R019C7 , IPZ60R099C7 , IPZ60R040C7 , IPW65R420CFD , IPW65R310CFD , IPW65R190E6 , IPW65R190CFDA .