All MOSFET. IRFP350 Datasheet

 

IRFP350 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP350

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 150 nC

Drain-Source Capacitance (Cd): 2900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO218

IRFP350 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP350 Datasheet (PDF)

1.1. irfp350cf.pdf Size:167K _upd-mosfet

IRFP350



1.2. irfp350lcpbf.pdf Size:1495K _upd-mosfet

IRFP350
IRFP350

PD- 95714 IRFP350LCPbF • Lead-Free 08/03/04 Document Number: 91224 www.vishay.com 1 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number: 91224 www.vishay.com 2 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number: 91224 www.vishay.com 3 Downloaded from Elcodis.com electronic components distributor

 1.3. irfp350r.pdf Size:62K _upd-mosfet

IRFP350
IRFP350

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP350R FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI

1.4. irfp350pbf.pdf Size:1571K _upd-mosfet

IRFP350
IRFP350

IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.30 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 • Fast Switching Qgs (nC) 23 • Ease of Paralleling Qgd (nC) 80 • Simple Drive Requirements Configuration Single • Lead

 1.5. irfp350fi.pdf Size:407K _st2

IRFP350
IRFP350

1.6. irfp350a.pdf Size:232K _fairchild_semi

IRFP350
IRFP350

IRFP350A FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3? Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS D

1.7. irfp350.pdf Size:872K _international_rectifier

IRFP350
IRFP350

PD - 94877 IRFP350PbF Lead-Free 12/9/03 Document Number: 91225 www.vishay.com 1 IRFP350PbF Document Number: 91225 www.vishay.com 2 IRFP350PbF Document Number: 91225 www.vishay.com 3 IRFP350PbF Document Number: 91225 www.vishay.com 4 IRFP350PbF Document Number: 91225 www.vishay.com 5 IRFP350PbF Document Number: 91225 www.vishay.com 6 IRFP350PbF TO-247AC Package Outline

1.8. irfp350lc.pdf Size:160K _international_rectifier

IRFP350
IRFP350

PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 400V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.30? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

1.9. irfp350lcpbf.pdf Size:1471K _international_rectifier

IRFP350
IRFP350

PD- 95714 IRFP350LCPbF Lead-Free 08/03/04 Document Number: 91224 www.vishay.com 1 IRFP350LCPbF Document Number: 91224 www.vishay.com 2 IRFP350LCPbF Document Number: 91224 www.vishay.com 3 IRFP350LCPbF Document Number: 91224 www.vishay.com 4 IRFP350LCPbF Document Number: 91224 www.vishay.com 5 IRFP350LCPbF Document Number: 91224 www.vishay.com 6 IRFP350LCPbF Document N

1.10. irfp350a.pdf Size:985K _samsung

IRFP350
IRFP350

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.11. irfp350-353.pdf Size:220K _samsung

IRFP350
IRFP350

 This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.

1.12. irfp350lc sihfp350lc.pdf Size:1303K _vishay

IRFP350
IRFP350

IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Available Reduced Gate Drive Requirement RDS(on) (?)VGS = 10 V 0.30 Enhanced 30V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 76 Isolated Central Mounting Hole Qgs (nC) 20 Dynamic dV/dt Rated Qgd (nC) 37 Repetitive Avalanche Rated Con

1.13. irfp350 sihfp350.pdf Size:1574K _vishay

IRFP350
IRFP350

IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Compliant to RoHS Direct

Datasheet: IRFP332 , IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP064N , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 .

 

 
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