IPW65R099C6 PDF and Equivalents Search

 ..1. Size:3785K  infineon
 ipa65r099c6 ipb65r099c6 ipi65r099c6 ipp65r099c6 ipw65r099c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPx65R099C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R099C6, IPB65R099C6, IPP65R099C6 IPA65R099C6, IPI65R099C6 TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs... See More ⇒

 ..2. Size:3828K  infineon
 ipw65r099c6 ipb65r099c6 ipp65r099c6 ipa65r099c6 ipi65r099c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPx65R099C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R099C6, IPB65R099C6, IPP65R099C6 IPA65R099C6, IPI65R099C6 TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs... See More ⇒

 ..3. Size:242K  inchange semiconductor
 ipw65r099c6.pdf

isc N-Channel MOSFET Transistor IPW65R099C6 IIPW65R099C6 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒

 6.1. Size:1925K  infineon
 ipw65r095c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R095C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R095C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion... See More ⇒

 6.2. Size:242K  inchange semiconductor
 ipw65r095c7.pdf

isc N-Channel MOSFET Transistor IPW65R095C7 IIPW65R095C7 FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒

 7.1. Size:1112K  infineon
 ipw65r037c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPW65R037C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R037C6 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion... See More ⇒

 7.2. Size:1486K  infineon
 ipw65r080cfd.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS CFD Power Transistor IPW65R080CFD 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion... See More ⇒

 7.3. Size:1972K  infineon
 ipw65r019c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R019C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R019C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion... See More ⇒

 7.4. Size:1705K  infineon
 ipw65r070c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R070C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered... See More ⇒

 7.5. Size:1075K  infineon
 ipw65r080cfda.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPW65R080CFDA Data Sheet Rev. 2.1 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R080CFDA TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by ... See More ⇒

 7.6. Size:1095K  infineon
 ipw65r041cfd.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPW65R041CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R041CFD TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a... See More ⇒

 7.7. Size:1960K  infineon
 ipw65r045c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R045C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R045C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion... See More ⇒

 7.8. Size:1964K  infineon
 ipw65r065c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R065C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R065C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion... See More ⇒

 7.9. Size:870K  infineon
 ipw65r048cfda.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPW65R048CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R048CFDA TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by ... See More ⇒

 7.10. Size:242K  inchange semiconductor
 ipw65r037c6.pdf

isc N-Channel MOSFET Transistor IPW65R037C6 IIPW65R037C6 FEATURES Static drain-source on-resistance RDS(on) 37m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒

 7.11. Size:242K  inchange semiconductor
 ipw65r080cfd.pdf

isc N-Channel MOSFET Transistor IPW65R080CFD IIPW65R080CFD FEATURES Static drain-source on-resistance RDS(on) 80m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS... See More ⇒

 7.12. Size:241K  inchange semiconductor
 ipw65r070c6.pdf

isc N-Channel MOSFET Transistor IPW65R070C6 IIPW65R070C6 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒

 7.13. Size:242K  inchange semiconductor
 ipw65r041cfd.pdf

isc N-Channel MOSFET Transistor IPW65R041CFD IIPW65R041CFD FEATURES Static drain-source on-resistance RDS(on) 41m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS... See More ⇒

 7.14. Size:242K  inchange semiconductor
 ipw65r045c7.pdf

isc N-Channel MOSFET Transistor IPW65R045C7 IIPW65R045C7 FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒

 7.15. Size:242K  inchange semiconductor
 ipw65r065c7.pdf

isc N-Channel MOSFET Transistor IPW65R065C7 IIPW65R065C7 FEATURES Static drain-source on-resistance RDS(on) 65m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒

 7.16. Size:331K  inchange semiconductor
 ipw65r048cfda.pdf

isc N-Channel MOSFET Transistor IPW65R048CFDA FEATURES Drain Current I = 63.3A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.048 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch a... See More ⇒