IPW60R330P6 Datasheet. Specs and Replacement
Type Designator: IPW60R330P6 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 93 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 47 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
Package: TO-247
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IPW60R330P6 substitution
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R075CP IIPW60R075CP FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
ipw60r190c6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R190C IIPW60R190C6 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour... See More ⇒
ipw60r299cp.pdf
isc N-Channel MOSFET Transistor IPW60R299CP IIPW60R299CP FEATURES Static drain-source on-resistance RDS(on) 299m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒
ipw60r190p6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R190P6 IIPW60R190P6 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So... See More ⇒
ipw60r280e6.pdf
isc N-Channel MOSFET Transistor IPW60R280E6 IIPW60R280E6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL... See More ⇒
ipw60r099cp.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099CP IIPW60R099CP FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
ipw60r180c7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R180C7 IIPW60R180C7 FEATURES Static drain-source on-resistance RDS(on) 180m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So... See More ⇒
ipw60r041p6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R041P6 IIPW60R041P6 FEATURES Static drain-source on-resistance RDS(on) 41m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
ipw60r125p6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R125P6 IIPW60R125P6 FEATURES Static drain-source on-resistance RDS(on) 125m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So... See More ⇒
ipw60r120c7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R120C7 IIPW60R120C7 FEATURES Static drain-source on-resistance RDS(on) 120m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
ipw60r190e6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R190E6 IIPW60R190E6 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So... See More ⇒
ipw60r045cp.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CP FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒
ipw60r080p7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R080P7 IIPW60R080P7 FEATURES Static drain-source on-resistance RDS(on) 80m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
ipw60r280c6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R280C6 IIPW60R280C6 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So... See More ⇒
ipw60r160p6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R160P6 IIPW60R160P6 FEATURES Static drain-source on-resistance RDS(on) 160m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So... See More ⇒
ipw60r041c6.pdf
isc N-Channel MOSFET Transistor IPW60R041C6 IIPW60R041C6 FEATURES Static drain-source on-resistance RDS(on) 41m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒
ipw60r070p6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R070P6 IIPW60R070P6 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
ipw60r125c6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R125C6 IIPW60R125C6 FEATURES Static drain-source on-resistance RDS(on) 125m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So... See More ⇒
ipw60r099p7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099P7 IIPW60R099P7 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
ipw60r250cp.pdf
isc N-Channel MOSFET Transistor IPW60R250CP IIPW60R250CP FEATURES Static drain-source on-resistance RDS(on) 250m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒
ipw60r040c7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R040C7 IIPW60R040C7 FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
ipw60r280p6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R280P6 IIPW60R280P6 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So... See More ⇒
ipw60r165cp.pdf
isc N-Channel MOSFET Transistor IPW60R165CP IIPW60R165CP FEATURES Static drain-source on-resistance RDS(on) 165m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒
ipw60r160c6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R160C6 IIPW60R160C6 FEATURES Static drain-source on-resistance RDS(on) 160m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So... See More ⇒
ipw60r170cfd7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R170CFD7 IIPW60R170CFD7 FEATURES Static drain-source on-resistance RDS(on) 170m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drai... See More ⇒
ipw60r099c7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099C7 IIPW60R099C7 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
ipw60r199cp.pdf
isc N-Channel MOSFET Transistor IPW60R199CP IIPW60R199CP FEATURES Static drain-source on-resistance RDS(on) 199m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒
ipw60r125cp.pdf
isc N-Channel MOSFET Transistor IPW60R125CP IIPW60R125CP FEATURES Static drain-source on-resistance RDS(on) 125m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒
ipw60r070cfd7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R070CFD7 IIPW60R070CFD7 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain... See More ⇒
ipw60r060c7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R060C7 IIPW60R060C7 FEATURES Static drain-source on-resistance RDS(on) 60m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
Detailed specifications: IPW65R095C7, IPW65R080CFDA, IPW65R065C7, IPW65R048CFDA, IPW65R045C7, IPW65R041CFD, IPW65R037C6, IPW65R019C7, IRF3710, IPW60R280P6, IPW60R230P6, IPW60R190P6, IPW60R180C7, IPW60R160P6, IPW60R125P6, IPW60R099P6, IPW60R099C7
Keywords - IPW60R330P6 MOSFET specs
IPW60R330P6 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
MOSFET Parameters. How They Affect Each Other
History: R8005ANJ | PR804BA33
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