IPU80R1K0CE MOSFET Datasheet: N-Ch, 800V, 5.7A. Full specification with pinout and replacement list

IPU80R1K0CE Specs and Replacement

Type Designator: IPU80R1K0CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 33 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO-251

IPU80R1K0CE substitution

- MOSFET ⓘ Cross-Reference Search

IPU80R1K0CE datasheet

..1. Size:2278K infineon
ipd80r1k0ce ipu80r1k0ce.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K0CE, IPU80R1K0CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine... See More ⇒

..2. Size:261K inchange semiconductor
ipu80r1k0ce.pdf pdf_icon

isc N-Channel MOSFET Transistor IPU80R1K0CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

6.1. Size:1228K infineon
ipu80r1k4p7.pdf pdf_icon

IPU80R1K4P7 MOSFET IPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(... See More ⇒

6.2. Size:2292K infineon
ipd80r1k4ce ipu80r1k4ce.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K4CE, IPU80R1K4CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine... See More ⇒