All MOSFET. IPU50R1K4CE Datasheet

 

IPU50R1K4CE MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPU50R1K4CE
   Marking Code: 5R1K4CE_50S1K4CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 4.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.2 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-251

 IPU50R1K4CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPU50R1K4CE Datasheet (PDF)

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