IPU50R1K4CE Specs and Replacement
Type Designator: IPU50R1K4CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 11 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-251
IPU50R1K4CE substitution
IPU50R1K4CE datasheet
ipd50r1k4ce ipu50r1k4ce 50s1k4ce.pdf
IPD50R1K4CE, IPU50R1K4CE MOSFET DPAK IPAK 500V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer an... See More ⇒
ipd50r1k4ce ipu50r1k4ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R1K4CE Data Sheet Rev. 2.2 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R1K4CE, IPU50R1K4CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒
ipu50r1k4ce.pdf
isc N-Channel MOSFET Transistor IPU50R1K4CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
ipd50r2k0ce ipu50r2k0ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R2K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R2K0CE, IPU50R2K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒
Detailed specifications: IPU60R2K1CE , IPU60R2K0C6 , IPU60R1K5CE , IPU60R1K4C6 , IPU60R1K0CE , IPU50R950CE , IPU50R3K0CE , IPU50R2K0CE , 5N65 , IPU13N03LAG , IPU06N03LAG , IPT059N15N3 , IPT020N10N3 , IPT015N10N5 , IPT012N08N5 , IPT007N06N , IPT004N03L .
Keywords - IPU50R1K4CE MOSFET specs
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