IPT020N10N3 Datasheet and Replacement. Cross Reference Search

IPT020N10N3 Datasheet (PDF)

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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM3 Power-Transistor, 100 VIPT020N10N3Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM3 Power-Transistor, 100 VIPT020N10N3HSOF1 DescriptionFeaturesTab N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Extremely low on-resistance RDS(on)1

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IPT029N08N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 80 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target application

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IPT026N10N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 100 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product val

Datasheet: IPU60R1K0CE , IPU50R950CE , IPU50R3K0CE , IPU50R2K0CE , IPU50R1K4CE , IPU13N03LAG , IPU06N03LAG , IPT059N15N3 , AO4407 , IPT015N10N5 , IPT012N08N5 , IPT007N06N , IPT004N03L , IPS65R950C6 , IPS65R1K5CE , IPS65R1K4C6 , IPS65R1K0CE .