IPS65R950C6 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPS65R950C6
Marking Code: 65C6950
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 23 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO-251
IPS65R950C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPS65R950C6 Datasheet (PDF)
ips65r950c6.pdf
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ips65r650ce.pdf
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ipd65r400ce ips65r400ce.pdf
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ips65r1k0ce.pdf
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ips65r1k4c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPS65R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPS65R1K4C6IPAK SL1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pion
ips65r1k5ce.pdf
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ips65r400ce.pdf
isc N-Channel MOSFET Transistor IPS65R400CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IXFK26N90
History: IXFK26N90
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