IPS050N03L Datasheet and Replacement
Type Designator: IPS050N03L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 920 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO-251
IPS050N03L substitution
IPS050N03L Datasheet (PDF)
ipd050n03lg ipf050n03lg ips050n03lg ipu050n03lg ipd050n03l ips050n03l.pdf

Type IPD050N03L G IPF050N03L GIPS050N03L G IPU050N03L GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 50 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on
ipd050n03l ipf050n03l ips050n03l ipu050n03l.pdf

Type IPD050N03L G IPF050N03L GIPS050N03L G IPU050N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low
ips0551t.pdf

Data Sheet No. PD60160-BIPS0551TFULLY PROTECTED POWER MOSFET SWITCHProduct SummaryFeatures Over temperature shutdown Over current shutdown Rds(on) 6.0m (max) Active clamp Low current & logic level inputV clamp 40V E.S.D protectionIshutdown 100ADescriptionTon/Toff 4sThe IPS0551T is a fully protected three terminal SMARTPOWER MOSFET that features
Datasheet: IPT004N03L , IPS65R950C6 , IPS65R1K5CE , IPS65R1K4C6 , IPS65R1K0CE , IPS090N03L , IPS075N03L , IPS060N03L , AO3401 , IPS040N03L , IPS031N03L , IPP65R660CFDA , IPP65R420CFD , IPP65R310CFDA , IPP65R310CFD , IPP65R225C7 , IPP65R190E6 .
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