IPS031N03L
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPS031N03L
Marking Code: 031N03L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 94
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 1400
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031
Ohm
Package:
TO-251
IPS031N03L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPS031N03L
Datasheet (PDF)
..1. Size:665K infineon
ips031n03l.pdf
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..2. Size:261K inchange semiconductor
ips031n03l.pdf
isc N-Channel MOSFET Transistor IPS031N03LFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
0.1. Size:671K infineon
ipd031n03lg ips031n03lg.pdf
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8.1. Size:128K international rectifier
ips031g.pdf
Data Sheet No.PD 60151-JIPS031G/IPS032GSINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCHFeatures Product Summary Over temperature shutdown Over current shutdownRds(on) 70m (max) Active clamp Low current & logic level inputV clamp 50V E.S.D protectionIshutdown 12ADescriptionTon/Toff 1.5sThe IPS031G/IPS032G are fully protected single/duallow side SM
8.2. Size:135K international rectifier
ips031.pdf
Data Sheet No.PD 60150-J( )IPS031 SFULLY PROTECTED POWER MOSFET SWITCHProduct SummaryFeatures Over temperature shutdown Over current shutdownRds(on) 60m (max) Active clamp Low current & logic level input E.S.D protection V clamp 50VIshutdown 12ADescriptionTon/Toff 1.5sThe IPS031/IPS031S are fully protected three terminalSMART POWER MOSFETs tha
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