IPP60R600P6 Specs and Replacement

Type Designator: IPP60R600P6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-220

IPP60R600P6 substitution

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IPP60R600P6 datasheet

 ..1. Size:2849K  infineon
ipb60r600p6 ipp60r600p6 ipa60r600p6 ipd60r600p6.pdf pdf_icon

IPP60R600P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPB60R600P6, IPP60R600P6, IPA60R600P6, IPD60R600P6 D PAK TO-220 TO-220 FP 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFET... See More ⇒

 ..2. Size:2688K  infineon
ipa60r600p6 ipd60r600p6 ipp60r600p6.pdf pdf_icon

IPP60R600P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R600P6, IPA60R600P6, IPD60R600P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accor... See More ⇒

 ..3. Size:2519K  infineon
ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf pdf_icon

IPP60R600P6

IPB60R600P6, IPP60R600P6, IPD60R600P6, IPA60R600P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli... See More ⇒

 ..4. Size:245K  inchange semiconductor
ipp60r600p6.pdf pdf_icon

IPP60R600P6

isc N-Channel MOSFET Transistor IPP60R600P6 IIPP60R600P6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ... See More ⇒

Detailed specifications: IPP65R125C7, IPP65R110CFDA, IPP65R110CFD, IPP65R099C6, IPP65R095C7, IPP65R074C6, IPP65R065C7, IPP65R045C7, IRF830, IPP60R380P6, IPP60R330P6, IPP60R280P6, IPP60R230P6, IPP60R1K4C6, IPP60R190P6, IPP60R180C7, IPP60R160P6

Keywords - IPP60R600P6 MOSFET specs

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