All MOSFET. IPP60R099C7 Datasheet

 

IPP60R099C7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP60R099C7
   Marking Code: 60C7099
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO-220

 IPP60R099C7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP60R099C7 Datasheet (PDF)

 ..1. Size:1879K  infineon
 ipp60r099c7.pdf

IPP60R099C7 IPP60R099C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPP60R099C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPP60R099C7TO-2201 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle a

 ..2. Size:244K  inchange semiconductor
 ipp60r099c7.pdf

IPP60R099C7 IPP60R099C7

isc N-Channel MOSFET Transistor IPP60R099C7IIPP60R099C7FEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombines the benefits of a fast switching SJ MOSFET withexcellent ease of useABSOLUTE M

 4.1. Size:291K  infineon
 ipp60r099cpa.pdf

IPP60R099C7 IPP60R099C7

IPP60R099CPACoolMOSTM Power TransistorProduct SummaryV 600 VDSR 0.105DS(on),maxQ 60 nCg,typFeatures Worldwide best R in TO220ds,on Ultra low gate chargePG-TO220-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for

 4.2. Size:1385K  infineon
 ipp60r099c6.pdf

IPP60R099C7 IPP60R099C7

MOSFET+ =L9D - PA

 4.3. Size:571K  infineon
 ipp60r099cp.pdf

IPP60R099C7 IPP60R099C7

IPP60R099CPCIMOSTM #:A0

 4.4. Size:2087K  infineon
 ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf

IPP60R099C7 IPP60R099C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R099C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

 4.5. Size:245K  inchange semiconductor
 ipp60r099c6.pdf

IPP60R099C7 IPP60R099C7

isc N-Channel MOSFET Transistor IPP60R099C6IIPP60R099C6FEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONProvide all benefits of a fast switching super junction MOS while notSacrificing ease of use

 4.6. Size:245K  inchange semiconductor
 ipp60r099cp.pdf

IPP60R099C7 IPP60R099C7

isc N-Channel MOSFET Transistor IPP60R099CPIIPP60R099CPFEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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