IPP220N25NFD Datasheet and Replacement
Type Designator: IPP220N25NFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 61 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 398 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO-220
IPP220N25NFD substitution
IPP220N25NFD Datasheet (PDF)
ipp220n25nfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTMFD Power-Transistor, 250 VIPP220N25NFDData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTMFD Power-Transistor, 250 VIPP220N25NFDTO-220-31 DescriptiontabFeatures N-channel, normal level Fast Diode (FD) with reduced Qrr Optimized for hard commutation ruggedness Ver
ipp220n25nfd.pdf

isc N-Channel MOSFET Transistor IPP220N25NFDIIPP220N25NFDFEATURESStatic drain-source on-resistance:RDS(on) 22mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for hard commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
ipb22n03s4l-15 ipi22n03s4l-15 ipp22n03s4l-15 ipp22n03s4l ipb22n03s4l ipi22n03s4l.pdf

IPB22N03S4L-15IPI22N03S4L-15, IPP22N03S4L-15OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 14.6mDS(on),max I 22 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low
Datasheet: IPP60R099C7 , IPP60R074C6 , IPP60R040C7 , IPP50R500CE , IPP50R280CE , IPP50R190CE , IPP410N30N , IPP25N06S3-25 , 20N60 , IPP14N03LA , IPP147N03L , IPP120N20NFD , IPP110N20NA , IPP100N06S3L-04 , IPP100N06S3L-03 , IPP09N03LA , IPP096N03L .
Keywords - IPP220N25NFD MOSFET datasheet
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