All MOSFET. IPP110N20NA Datasheet

 

IPP110N20NA MOSFET. Datasheet pdf. Equivalent

Type Designator: IPP110N20NA

Marking Code: 110N20NA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 88 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 26 nS

Drain-Source Capacitance (Cd): 401 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0107 Ohm

Package: TO-220

IPP110N20NA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP110N20NA Datasheet (PDF)

0.1. ipb107n20na ipp110n20na.pdf Size:652K _infineon

IPP110N20NA
IPP110N20NA

IPB107N20NA IPP110N20NAOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IE

0.2. ipp110n20na.pdf Size:245K _inchange_semiconductor

IPP110N20NA
IPP110N20NA

isc N-Channel MOSFET Transistor IPP110N20NAIIPP110N20NAFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

 4.1. ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdf Size:690K _infineon

IPP110N20NA
IPP110N20NA

IPB107N20N3 G IPP110N20N3 GIPI110N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl

4.2. ipp110n20n3.pdf Size:245K _inchange_semiconductor

IPP110N20NA
IPP110N20NA

isc N-Channel MOSFET Transistor IPP110N20N3IIPP110N20N3FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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