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IPP110N20NA Spec and Replacement


   Type Designator: IPP110N20NA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 88 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 401 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
   Package: TO-220

 IPP110N20NA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP110N20NA Specs

 ..1. Size:652K  infineon
 ipb107n20na ipp110n20na.pdf pdf_icon

IPP110N20NA

IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max (TO263) 10.7 mW Excellent gate charge x R product (FOM) DS(on) ID 88 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IE... See More ⇒

 ..2. Size:245K  inchange semiconductor
 ipp110n20na.pdf pdf_icon

IPP110N20NA

isc N-Channel MOSFET Transistor IPP110N20NA IIPP110N20NA FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

 4.1. Size:690K  infineon
 ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdf pdf_icon

IPP110N20NA

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max (TO263) 10.7 mW Excellent gate charge x R product (FOM) DS(on) ID 88 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl... See More ⇒

 4.2. Size:245K  inchange semiconductor
 ipp110n20n3.pdf pdf_icon

IPP110N20NA

isc N-Channel MOSFET Transistor IPP110N20N3 IIPP110N20N3 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

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Detailed specifications: IPP50R280CE , IPP50R190CE , IPP410N30N , IPP25N06S3-25 , IPP220N25NFD , IPP14N03LA , IPP147N03L , IPP120N20NFD , IRFP460 , IPP100N06S3L-04 , IPP100N06S3L-03 , IPP09N03LA , IPP096N03L , IPP083N10N5 , IPP080N03L , IPP060N06N , IPP055N03L .

Keywords - IPP110N20NA MOSFET specs

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