All MOSFET. IPP100N06S3L-03 Datasheet

 

IPP100N06S3L-03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP100N06S3L-03
   Marking Code: 3PN06L03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 550 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 3290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: TO-220

 IPP100N06S3L-03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP100N06S3L-03 Datasheet (PDF)

 0.1. Size:193K  infineon
ipi100n06s3l-04 ipp100n06s3l-04.pdf

IPP100N06S3L-03
IPP100N06S3L-03

IPB100N06S3L-04IPI100N06S3L-04, IPP100N06S3L-04OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 3.5mDS(on),maxI 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Av

 0.2. Size:190K  infineon
ipp100n06s3l-03.pdf

IPP100N06S3L-03
IPP100N06S3L-03

IPB100N06S3L-03IPI100N06S3L-03, IPP100N06S3L-03OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 2.7mDS(on),maxI 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Av

 4.1. Size:159K  infineon
ipb100n06s2l-05 ipp100n06s2l-05.pdf

IPP100N06S3L-03
IPP100N06S3L-03

IPB100N06S2L-05IPP100N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.4mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala

 4.2. Size:155K  infineon
ipb100n06s2-05 ipp100n06s2-05.pdf

IPP100N06S3L-03
IPP100N06S3L-03

IPB100N06S2-05IPP100N06S2-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 4.7mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedT

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPP100N04S2L-03 | SMF4N60 | AOB12N50L | VSD013N10MS | SM6A23NSFP | APT8030JVFR | RSR025N05

 

 
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