All MOSFET. IPP096N03L Datasheet

 

IPP096N03L MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP096N03L
   Marking Code: 096N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: TO-220

 IPP096N03L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP096N03L Datasheet (PDF)

 ..1. Size:614K  infineon
 ipp096n03l.pdf

IPP096N03L IPP096N03L

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 ..2. Size:617K  infineon
 ipp096n03l .pdf

IPP096N03L IPP096N03L

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 0.1. Size:636K  infineon
 ipb096n03lg ipp096n03lg.pdf

IPP096N03L IPP096N03L

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 9.1. Size:687K  infineon
 ipb090n06n3g ipp093n06n3g.pdf

IPP096N03L IPP096N03L

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 9.2. Size:295K  infineon
 ipb090n06n3 ipp093n06n3.pdf

IPP096N03L IPP096N03L

Type IPB090N06N3 G IPP093N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS for sync. rectification, drives and dc/dc SMPSR 9mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 50 AD Very low on-resistance RDS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications

 9.3. Size:311K  infineon
 ipb09n03la ipi09n03la ipp09n03la.pdf

IPP096N03L IPP096N03L

IPB09N03LAIPI09N03LA, IPP09N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 8.9m DS(on),max N-channelI 50 AD Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Superior thermal resistance 1

 9.4. Size:687K  infineon
 ipp093n06n3 ipb093n06n3.pdf

IPP096N03L IPP096N03L

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 9.5. Size:245K  inchange semiconductor
 ipp093n06n3.pdf

IPP096N03L IPP096N03L

isc N-Channel MOSFET Transistor IPP093N06N3IIPP093N06N3FEATURESStatic drain-source on-resistance:RDS(on) 9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: DMN2400UFB4

 

 
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