All MOSFET. IRFP350CF Datasheet

 

IRFP350CF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP350CF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 175 W
   Maximum Drain-Source Voltage |Vds|: 400 V
   Maximum Drain Current |Id|: 19 A
   Rise Time (tr): 65 nS
   Drain-Source Capacitance (Cd): 600 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm
   Package: TO3P

 IRFP350CF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP350CF Datasheet (PDF)

 ..1. Size:167K  international rectifier
irfp350cf.pdf

IRFP350CF

 7.1. Size:1495K  international rectifier
irfp350lcpbf.pdf

IRFP350CF
IRFP350CF

PD- 95714IRFP350LCPbF Lead-Free08/03/04Document Number: 91224 www.vishay.com1Downloaded from Elcodis.com electronic components distributor IRFP350LCPbFDocument Number: 91224 www.vishay.com2Downloaded from Elcodis.com electronic components distributor IRFP350LCPbFDocument Number: 91224 www.vishay.com3Downloaded from Elcodis.com electronic components distributor

 7.2. Size:160K  international rectifier
irfp350lc.pdf

IRFP350CF
IRFP350CF

PD - 9.1229IRFP350LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 400VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.30Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 16ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

 7.3. Size:872K  international rectifier
irfp350.pdf

IRFP350CF
IRFP350CF

PD - 94877IRFP350PbF Lead-Free12/9/03Document Number: 91225 www.vishay.com1IRFP350PbFDocument Number: 91225 www.vishay.com2IRFP350PbFDocument Number: 91225 www.vishay.com3IRFP350PbFDocument Number: 91225 www.vishay.com4IRFP350PbFDocument Number: 91225 www.vishay.com5IRFP350PbFDocument Number: 91225 www.vishay.com6IRFP350PbFTO-247AC Package Ou

 7.4. Size:407K  st
irfp350fi.pdf

IRFP350CF
IRFP350CF

 7.5. Size:232K  fairchild semi
irfp350a.pdf

IRFP350CF
IRFP350CF

IRFP350AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characterist

 7.6. Size:220K  samsung
irfp350-353.pdf

IRFP350CF
IRFP350CF

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

 7.7. Size:985K  samsung
irfp350a.pdf

IRFP350CF
IRFP350CF

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 7.8. Size:220K  samsung
irfp350 irfp351 irfp352 irfp353.pdf

IRFP350CF
IRFP350CF

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

 7.9. Size:1571K  vishay
irfp350pbf.pdf

IRFP350CF
IRFP350CF

IRFP350, SiHFP350Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Lead

 7.10. Size:1574K  vishay
irfp350 sihfp350.pdf

IRFP350CF
IRFP350CF

IRFP350, SiHFP350Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Compli

 7.11. Size:1303K  vishay
irfp350lc sihfp350lc.pdf

IRFP350CF
IRFP350CF

IRFP350LC, SiHFP350LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.30 Enhanced 30V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 76 Isolated Central Mounting HoleQgs (nC) 20 Dynamic dV/dt RatedQgd (nC) 37 Repetitive Av

 7.12. Size:1579K  infineon
irfp350 sihfp350.pdf

IRFP350CF
IRFP350CF

IRFP350, SiHFP350Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Compli

 7.13. Size:237K  inchange semiconductor
irfp350a.pdf

IRFP350CF
IRFP350CF

isc N-Channel MOSFET Transistor IRFP350AFEATURESDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

 7.14. Size:365K  inchange semiconductor
irfp350lc.pdf

IRFP350CF
IRFP350CF

isc N-Channel MOSFET ransistor IRFP350LCFEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

 7.15. Size:62K  inchange semiconductor
irfp350r.pdf

IRFP350CF
IRFP350CF

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP350R FEATURES Drain Current ID= 16A@ TC=25 Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.3(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI

 7.16. Size:237K  inchange semiconductor
irfp350.pdf

IRFP350CF
IRFP350CF

isc N-Channel MOSFET ransistor IRFP350FEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies an

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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