IRFP350LCPBF Specs and Replacement

Type Designator: IRFP350LCPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO247AC

IRFP350LCPBF substitution

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IRFP350LCPBF datasheet

 ..1. Size:1495K  international rectifier
irfp350lcpbf.pdf pdf_icon

IRFP350LCPBF

PD- 95714 IRFP350LCPbF Lead-Free 08/03/04 Document Number 91224 www.vishay.com 1 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number 91224 www.vishay.com 2 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number 91224 www.vishay.com 3 Downloaded from Elcodis.com electronic components distributor ... See More ⇒

 5.1. Size:160K  international rectifier
irfp350lc.pdf pdf_icon

IRFP350LCPBF

PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 400V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.30 Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional... See More ⇒

 5.2. Size:1303K  vishay
irfp350lc sihfp350lc.pdf pdf_icon

IRFP350LCPBF

IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Available Reduced Gate Drive Requirement RDS(on) ( )VGS = 10 V 0.30 Enhanced 30V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 76 Isolated Central Mounting Hole Qgs (nC) 20 Dynamic dV/dt Rated Qgd (nC) 37 Repetitive Av... See More ⇒

 5.3. Size:365K  inchange semiconductor
irfp350lc.pdf pdf_icon

IRFP350LCPBF

isc N-Channel MOSFET ransistor IRFP350LC FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies ... See More ⇒

Detailed specifications: IPP020N06N, IRFP340R, IRFP3415PBF, IRFP341R, IRFP342R, IRFP343R, IRFP344PBF, IRFP350CF, IRFP260, IRFP350PBF, IRFP350R, IRFP351R, IRFP352R, IRFP353R, IRFP354PBF, IRFP360PBF, IRFP362

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