IRFP360PBF Specs and Replacement

Type Designator: IRFP360PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 79 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO247

IRFP360PBF substitution

- MOSFET ⓘ Cross-Reference Search

 

IRFP360PBF datasheet

 ..1. Size:965K  vishay
irfp360pbf.pdf pdf_icon

IRFP360PBF

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.20 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 30 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Lead (... See More ⇒

 ..2. Size:272K  inchange semiconductor
irfp360pbf.pdf pdf_icon

IRFP360PBF

isc N-Channel MOSFET Transistor IRFP360PBF FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

 7.1. Size:153K  international rectifier
irfp360.pdf pdf_icon

IRFP360PBF

Document Number 90292 www.vishay.com 1001 www.vishay.com Document Number 90292 1002 Document Number 90292 www.vishay.com 1003 Document Number 90292 www.vishay.com 1004 Document Number 90292 www.vishay.com 1005 Document Number 90292 www.vishay.com 1006 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc.,... See More ⇒

 7.2. Size:162K  international rectifier
irfp360lc.pdf pdf_icon

IRFP360PBF

PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 400V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.20 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 23A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional... See More ⇒

Detailed specifications: IRFP350CF, IRFP350LCPBF, IRFP350PBF, IRFP350R, IRFP351R, IRFP352R, IRFP353R, IRFP354PBF, 12N60, IRFP362, IRFP3703PBF, IRFP3710PBF, IPL65R725CFD, IPL65R660E6, IPL65R650C6S, IPL65R460CFD, IPL65R420E6

Keywords - IRFP360PBF MOSFET specs

 IRFP360PBF cross reference

 IRFP360PBF equivalent finder

 IRFP360PBF pdf lookup

 IRFP360PBF substitution

 IRFP360PBF replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs