IPL60R360P6S Datasheet and Replacement

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R360P6SData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R360P6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CP600V CoolMOS CP Power TransistorIPL60R385CP Data SheetRev. 2.0, 2010-10-01Final Industrial & Multimarket600V CoolMOS CP Power Transistor IPL60R385CP1 DescriptionThe CoolMOS CP series offers devices which provide all benefits of a fastswitching SJ MOSFET while not sacrificing ease of use. Extremely

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CP600V CoolMOS CP Power TransistorIPL60R199CP Data SheetRev. 2.0, 2010-10-01Final Industrial & Multimarket600V CoolMOS CP Power Transistor IPL60R199CP1 DescriptionThe CoolMOS CP series offers devices which provide all benefits of a fastswitching SJ MOSFET while not sacrificing ease of use. Extremely

IPL60R185P7MOSFETThinPAK 8x8600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R180P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R180P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

IPL60R125P7MOSFETThinPAK 8x8600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R255P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R255P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

IPL60R160CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

IPL60R060CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CP600V CoolMOS CP Power TransistorIPL60R299CP Data SheetRev. 2.0, 2010-10-01Final Industrial & Multimarket600V CoolMOS CP Power Transistor IPL60R299CP1 DescriptionThe CoolMOS CP series offers devices which provide all benefits of a fastswitching SJ MOSFET while not sacrificing ease of use. Extremely

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPL60R1K5C6SData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C6 Power TransistorIPL60R1K5C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

IPL60R095CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R210P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R210P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

IPL60R085P7MOSFETThinPAK 8x8600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

IPL60R225CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

IPL60R185C7MOSFETThinPAK 8x8600V CoolMOS C7 Power TransistorCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology eve

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPL60R2K1C6SData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C6 Power TransistorIPL60R2K1C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

IPL60R065C7MOSFETThinPAK 8x8600V CoolMOS C7 Power TransistorCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology eve

IPL60R075CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R650P6SData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R650P6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an