IPL60R360P6S MOSFET. Datasheet pdf. Equivalent
Type Designator: IPL60R360P6S
Marking Code: 60P6360
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 89.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 11.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 47 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: THINPAK5X6
IPL60R360P6S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPL60R360P6S Datasheet (PDF)
ipl60r360p6s.pdf
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ipl60r385cp.pdf
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ipl60r199cp.pdf
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ipl60r185p7.pdf
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ipl60r180p6.pdf
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ipl60r255p6.pdf
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ipl60r060cfd7.pdf
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ipl60r299cp.pdf
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ipl60r095cfd7.pdf
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ipl60r210p6.pdf
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ipl60r225cfd7.pdf
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ipl60r185c7.pdf
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ipl60r075cfd7.pdf
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