IPI100N06S3L-04
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI100N06S3L-04
Marking Code: 3PN06L04
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 214
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 362
nC
trⓘ - Rise Time: 58
nS
Cossⓘ -
Output Capacitance: 2165
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035
Ohm
Package:
TO-262
IPI100N06S3L-04
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI100N06S3L-04
Datasheet (PDF)
0.1. Size:193K infineon
ipi100n06s3l-04 ipp100n06s3l-04.pdf 
IPB100N06S3L-04IPI100N06S3L-04, IPP100N06S3L-04OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 3.5mDS(on),maxI 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Av
6.1. Size:159K infineon
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf
IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy
6.3. Size:135K infineon
ipb100n04s4-h2 ipi100n04s4-h2 ipp100n04s4-h2.pdf
IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mWDS(on),maxI 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType
6.6. Size:287K inchange semiconductor
ipi100n08n3.pdf
isc N-Channel MOSFET Transistor IPI100N08N3FEATURESStatic drain-source on-resistance:RDS(on) 9.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
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