IPI100N06S3L-04 Specs and Replacement

Type Designator: IPI100N06S3L-04

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 2165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO-262

IPI100N06S3L-04 substitution

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IPI100N06S3L-04 datasheet

 0.1. Size:193K  infineon
ipi100n06s3l-04 ipp100n06s3l-04.pdf pdf_icon

IPI100N06S3L-04

IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 3.5 m DS(on),max I 100 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Av... See More ⇒

 6.1. Size:159K  infineon
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf pdf_icon

IPI100N06S3L-04

IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty... See More ⇒

 6.2. Size:158K  infineon
ipb100n08s2-07 ipp100n08s2-07 ipi100n08s2-07 ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07.pdf pdf_icon

IPI100N06S3L-04

IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 6.8 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

 6.3. Size:135K  infineon
ipb100n04s4-h2 ipi100n04s4-h2 ipp100n04s4-h2.pdf pdf_icon

IPI100N06S3L-04

IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 mW DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type ... See More ⇒

Detailed specifications: IPI65R190E6, IPI65R190CFD, IPI65R190C6, IPI65R150CFD, IPI65R110CFD, IPI65R099C6, IPI14N03LA, IPI12CN10NG, IRF830, IPI09N03LA, IPI084N06L3G, IPI04N03LA, IPI04CN10N, IPI029N06N, IPI020N06N, IPF13N03LAG, IPF135N03LG

Keywords - IPI100N06S3L-04 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs