IPF050N03LG Datasheet and Replacement
Type Designator: IPF050N03LG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 920 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO-252
IPF050N03LG substitution
IPF050N03LG Datasheet (PDF)
ipf050n03lg.pdf

Type IPD050N03L G IPF050N03L GIPS050N03L G IPU050N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low
ipd050n03lg ipf050n03lg ips050n03lg ipu050n03lg ipd050n03l ips050n03l.pdf

Type IPD050N03L G IPF050N03L GIPS050N03L G IPU050N03L GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 50 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on
ipd050n03l ipf050n03l ips050n03l ipu050n03l.pdf

Type IPD050N03L G IPF050N03L GIPS050N03L G IPU050N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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