IPD65R950CFD MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD65R950CFD
Marking Code: 65F6950
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 3.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 23 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO-252
IPD65R950CFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD65R950CFD Datasheet (PDF)
ipd65r950cfd.pdf
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ipd65r950cfd.pdf
isc N-Channel MOSFET Transistor IPD65R950CFD,IIPD65R950CFDFEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
ipd65r950c6.pdf
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ipd65r950c6.pdf
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ipd65r1k5ce.pdf
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ipd65r380c6.pdf
isc N-Channel MOSFET Transistor IPD65R380C6,IIPD65R380C6FEATURESStatic drain-source on-resistance:RDS(on)0.38Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipd65r250c6.pdf
isc N-Channel MOSFET Transistor IPD65R250C6,IIPD65R250C6FEATURESStatic drain-source on-resistance:RDS(on)0.25Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
ipd65r600e6.pdf
isc N-Channel MOSFET Transistor IPD65R600E6,IIPD65R600E6FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipd65r225c7.pdf
isc N-Channel MOSFET Transistor IPD65R225C7,IIPD65R225C7FEATURESStatic drain-source on-resistance:RDS(on)0.225Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS
ipd65r650ce.pdf
isc N-Channel MOSFET Transistor IPD65R650CE,IIPD65R650CEFEATURESStatic drain-source on-resistance:RDS(on)0.65Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipd65r1k0ce.pdf
isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CEFEATURESStatic drain-source on-resistance:RDS(on)1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
ipd65r250e6.pdf
isc N-Channel MOSFET Transistor IPD65R250E6,IIPD65R250E6FEATURESStatic drain-source on-resistance:RDS(on)0.25Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
ipd65r190c7.pdf
isc N-Channel MOSFET Transistor IPD65R190C7,IIPD65R190C7FEATURESStatic drain-source on-resistance:RDS(on)0.19Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS
ipd65r1k4cfd.pdf
isc N-Channel MOSFET Transistor IPD65R1K4CFD,IIPD65R1K4CFDFEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipd65r400ce.pdf
isc N-Channel MOSFET Transistor IPD65R400CE,IIPD65R400CEFEATURESStatic drain-source on-resistance:RDS(on)0.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipd65r380e6.pdf
isc N-Channel MOSFET Transistor IPD65R380E6,IIPD65R380E6FEATURESStatic drain-source on-resistance:RDS(on)0.38Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
ipd65r600c6.pdf
isc N-Channel MOSFET Transistor IPD65R600C6,IIPD65R600C6FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV
ipd65r1k4c6.pdf
isc N-Channel MOSFET Transistor IPD65R1K4C6,IIPD65R1K4C6FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipd65r1k5ce.pdf
isc N-Channel MOSFET Transistor IPD65R1K5CE,IIPD65R1K5CEFEATURESStatic drain-source on-resistance:RDS(on)1.5Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipd65r660cfd.pdf
isc N-Channel MOSFET Transistor IPD65R660CFD,IIPD65R660CFDFEATURESStatic drain-source on-resistance:RDS(on)0.66Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
