IPD65R190C7 Specs and Replacement

Type Designator: IPD65R190C7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 17 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO-252

IPD65R190C7 substitution

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IPD65R190C7 datasheet

 ..1. Size:1830K  infineon
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IPD65R190C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPD65R190C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPD65R190C7 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒

 ..2. Size:242K  inchange semiconductor
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IPD65R190C7

isc N-Channel MOSFET Transistor IPD65R190C7,IIPD65R190C7 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒

 7.1. Size:963K  infineon
 ipd65r1k0ce.pdf pdf_icon

IPD65R190C7

IPD65R1K0CE MOSFET DPAK 650V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high... See More ⇒

 7.2. Size:1133K  infineon
 ipd65r1k4cfd.pdf pdf_icon

IPD65R190C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPD65R1K4CFD Data Sheet Rev. 2.0 Rev. 2.1, 2013-07-31 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPD65R1K4CFD DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjuncti... See More ⇒

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Detailed specifications: IPD65R660CFDA, IPD65R420CFDA, IPD65R420CFD, IPD65R250E6, IPD65R250C6, IPD65R225C7, IPD65R1K4CFD, IPD65R1K4C6, IRF640, IPD60R800CE, IPD60R650CE, IPD60R600P6, IPD60R460CE, IPD60R400CE, IPD60R380P6, IPD60R380E6, IPD60R2K1CE

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