IPD50R1K4CE MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD50R1K4CE
Marking Code: 5R1K4CE_50S1K4CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 4.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.2 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 11 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-252
IPD50R1K4CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD50R1K4CE Datasheet (PDF)
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ipd50r1k4ce.pdf
isc N-Channel MOSFET Transistor IPD50R1K4CE,IIPD50R1K4CEFEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV
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ipd50r380ce.pdf
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ipd50r650ce.pdf
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ipd50r500ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R500CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPD50R500CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered by
ipd50r950ce ipu50r950ce.pdf
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ipd50r399cp.pdf
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ipd50r800ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R800CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPD50R800CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered by
ipd50r280ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R280CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPD50R280CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered by
ipd50r380ce.pdf
isc N-Channel MOSFET Transistor IPD50R380CE,IIPD50R380CEFEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r650ce.pdf
isc N-Channel MOSFET Transistor IPD50R650CE,IIPD50R650CEFEATURESStatic drain-source on-resistance:RDS(on)650mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r500ce.pdf
isc N-Channel MOSFET Transistor IPD50R500CE,IIPD50R500CEFEATURESStatic drain-source on-resistance:RDS(on)500mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r2k0ce.pdf
isc N-Channel MOSFET Transistor IPD50R2K0CE,IIPD50R2K0CEFEATURESStatic drain-source on-resistance:RDS(on)2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV G
ipd50r399cp.pdf
isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CPFEATURESStatic drain-source on-resistance:RDS(on)399mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r520cp.pdf
isc N-Channel MOSFET Transistor IPD50R520CP, IIPD50R520CPFEATURESStatic drain-source on-resistance:RDS(on)520mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r950ce.pdf
isc N-Channel MOSFET Transistor IPD50R950CE,IIPD50R950CEFEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipd50r3k0ce.pdf
isc N-Channel MOSFET Transistor IPD50R3K0CE,IIPD50R3K0CEFEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV G
ipd50r800ce.pdf
isc N-Channel MOSFET Transistor IPD50R800CE,IIPD50R800CEFEATURESStatic drain-source on-resistance:RDS(on)800mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r280ce.pdf
isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CEFEATURESStatic drain-source on-resistance:RDS(on)280mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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