IPD135N03L Specs and Replacement
Type Designator: IPD135N03L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: TO-252
IPD135N03L substitution
- MOSFET ⓘ Cross-Reference Search
IPD135N03L datasheet
ipd135n03l ipf135n03l ips135n03l ipu135n03l.pdf
Type IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 13.5 m DS(on),max Optimized technology for DC/DC converters I 30 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very ... See More ⇒
ipd135n03l.pdf
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ipd135n03l.pdf
isc N-Channel MOSFET Transistor IPD135N03L, IIPD135N03L FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V... See More ⇒
ipd135n03lg.pdf
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Detailed specifications: IPD50R650CE, IPD50R500CE, IPD50R3K0CE, IPD50R380CE, IPD50R2K0CE, IPD50R280CE, IPD50R1K4CE, IPD13N03LAG, STP75NF75, IPD090N03L, IPD075N03L, IPD06N03LBG, IPD060N03L, IPD053N06N, IPD050N03L, IPD04N03LBG, IPD040N03L
Keywords - IPD135N03L MOSFET specs
IPD135N03L cross reference
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IPD135N03L replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPA65R045C7
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