All MOSFET. IPD053N06N Datasheet

 

IPD053N06N MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD053N06N
   Marking Code: 053N06N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.3 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-252

 IPD053N06N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD053N06N Datasheet (PDF)

 ..1. Size:455K  infineon
 ipd053n06n.pdf

IPD053N06N IPD053N06N

TypeIPD053N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 5.3 mW Superior thermal resistanceID 45 A N-channelQOSS nC 32 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant Hal

 ..2. Size:242K  inchange semiconductor
 ipd053n06n.pdf

IPD053N06N IPD053N06N

isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06NFEATURESStatic drain-source on-resistance:RDS(on)5.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

 0.1. Size:615K  infineon
 ipd053n06n3.pdf

IPD053N06N IPD053N06N

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 6.1. Size:345K  infineon
 ipd053n08n3g.pdf

IPD053N06N IPD053N06N

IPD053N08N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 80 V N-channel, normal levelRDS(on),max 5.3 mW Excellent gate charge x R product (FOM)DS(on)ID 90 A Very low on-resistance RDS(on) 175 C operating temperatureprevious engineering Pb-free lead plating; RoHS compliantsample code: IPD06CN08N Qualified according to JEDEC1

 6.2. Size:450K  infineon
 ipd053n08n3.pdf

IPD053N06N IPD053N06N

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 6.3. Size:243K  inchange semiconductor
 ipd053n08n3.pdf

IPD053N06N IPD053N06N

isc N-Channel MOSFET Transistor IPD053N08N3,IIPD053N08N3FEATURESStatic drain-source on-resistance:RDS(on)5.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 80

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: DMP2069UFY4 | IXFR180N15P | IXTP50N20P

 

 
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