IPB12CN10NG MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB12CN10NG
Marking Code: 12CN10N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 67 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 49 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 489 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0126 Ohm
Package: TO-263
IPB12CN10NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB12CN10NG Datasheet (PDF)
ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdf
IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM)DS(on)ID 67 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)
ipb12cn10ng.pdf
Isc N-Channel MOSFET Transistor IPB12CN10NGFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf
IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC
ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf
IPB12CNE8N G IPD12CNE8N GIPI12CNE8N G IPP12CNE8N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 85 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1
ipb120n04s4l-02.pdf
Data Sheet IPB120N04S4L-02OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.7mID 120 AFeaturesPG-TO263-3-2 N-channel Logic Level - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB120N04S4L-02 PG-TO263-3- 4N04L02
ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf
IPB120N08S4-03IPI120N08S4-03, IPP120N08S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 2.5mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
ipb120p04p4-04 ipi120p04p4-04 ipp120p04p4-04.pdf
IPB120P04P4-04IPI120P04P4-04, IPP120P04P4-04OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 3.5mWID -120 AFeatures P-channel - Normal Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested
ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf
IPB120N06S4-03IPI120N06S4-03, IPP120N06S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.8mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste
ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02.pdf
IPB120N04S4-02IPI120N04S4-02, IPP120N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.8mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy
ipb120n08s4-04 ipi120n08s4-04 ipp120n08s4-04.pdf
IPB120N08S4-04IPI120N08S4-04, IPP120N08S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 4.1mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
ipb120p04p4l-03 ipi120p04p4l-03 ipp120p04p4l-03.pdf
IPB120P04P4L-03IPI120P04P4L-03, IPP120P04P4L-03OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 3.1mWID -120 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche test
ipb120n06ng ipp120n06ng.pdf
IPB120N06N G IPP120N06N G Power-TransistorProduct SummaryFeaturesV D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>=R 11 7 m + >= =O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2>64= 5@44 022>@38=6 B> # Type #)) ' ' ! #) ' ' !Package O 1 O
ipi120n06s4-h1 ipp120n06s4-h1 ipb120n06s4-h1.pdf
IPB120N06S4-H1IPI120N06S4-H1, IPP120N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.1mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste
ipb120n06s4-h1 ipi120n06s4-h1 ipp120n06s4-h1.pdf
IPB120N06S4-H1IPI120N06S4-H1, IPP120N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.1mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste
ipb120n10s4-03 ipi120n10s4-03 ipp120n10s4-03.pdf
IPB120N10S4-03IPI120N10S4-03, IPP120N10S4-03OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max (SMD version) 3.5mWID 120 AFeatures N-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanch
ipi120n04s4-02 ipp120n04s4-02 ipb120n04s4-02.pdf
IPB120N04S4-02IPI120N04S4-02, IPP120N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.8mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy
ipb120n04s3-02 ipi120n04s3-02 ipp120n04s3-02 ipp120n04s3 ipb120n04s3 ipi120n04s3-02.pdf
IPB120N04S3-02IPI120N04S3-02, IPP120N04S3-02OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.0mDS(on),maxI 120 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rd
ipb120n06s4-02 ipi120n06s4-02 ipp120n06s4-02 ipp120n06s4 ipb120n06s4 ipi120n06s4-02.pdf
IPB120N06S4-02IPI120N06S4-02, IPP120N06S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.4mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy
ipb120n04s4-01 ipi120n04s4-01 ipp120n04s4-01 ipp120n04s4-01 ipb120n04s4-01 ipi120n04s4-01.pdf
IPB120N04S4-01IPI120N04S4-01, IPP120N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.5mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy
ipb120n10s4-05 ipi120n10s4-05 ipp120n10s4-05.pdf
IPB120N10S4-05IPI120N10S4-05, IPP120N10S4-05OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max (SMD version) 5.0mWID 120 AFeatures N-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanch
ipb120n03s4l-03.pdf
IPB120N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel - Enhancement modeR 3mWDS(on),max Automotive AEC Q101 qualifiedI 120 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 Green package (lead free) 100% Avalanche testedType Package Ordering Code MarkingIPB120N03S4L-03 PG-TO263-3-2 -
ipb120n04s4-04.pdf
IPB120N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR 3.6mWDS(on),max Automotive AEC Q101 qualifiedI 120 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 Green package (lead free) 100% Avalanche testedType Package Ordering Code MarkingIPB120N04S4-04 PG-TO263-3-2 -
ipb120n06ng.pdf
IPB120N06NGwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sou
ipb123n10n3g.pdf
Isc N-Channel MOSFET Transistor IPB123N10N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
ipb120n10s4-05.pdf
isc N-Channel MOSFET Transistor IPB120N10S4-05FEATURESDrain Current : I = 120A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.3m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
