IRFP460 Datasheet. Specs and Replacement
The IRFP460 is an N-channel power MOSFET designed for high-voltage, high-speed switching applications. It features a drain-source voltage (V_DS) of 500V, a continuous drain current (I_D) of 20A, and a low on-resistance of 0.27Ω, ensuring efficient power handling. Its fast switching capability and high avalanche energy tolerance make it suitable for SMPS, motor drives, and high-frequency inverters. The TO-220 package offers robust thermal performance, supporting heat dissipation in demanding applications. With reliable switching characteristics and rugged construction, the IRFP460 is widely used in industrial and power electronics circuits.
Type Designator: IRFP460 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO247
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IRFP460 datasheet
..1. Size:873K international rectifier
irfp460.pdf 
PD - 94901 IRFP460PbF Lead-Free 12/19/03 Document Number 91237 www.vishay.com 1 IRFP460PbF Document Number 91237 www.vishay.com 2 IRFP460PbF Document Number 91237 www.vishay.com 3 IRFP460PbF Document Number 91237 www.vishay.com 4 IRFP460PbF Document Number 91237 www.vishay.com 5 IRFP460PbF Document Number 91237 www.vishay.com 6 IRFP460PbF TO-247AC Package O... See More ⇒
..2. Size:91K st
irfp460.pdf
IRFP460 N - CHANNEL 500V - 0.22 - 20 A - TO-247 PowerMESH MOSFET TYPE VDSS RDS(on) ID IRFP460 500 V ... See More ⇒
..3. Size:159K vishay
irfp460 sihfp460.pdf
IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 29 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements D Le... See More ⇒
..4. Size:156K vishay
irfp460pbf irfp460 sihfp460.pdf
IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 29 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements D Le... See More ⇒
..5. Size:77K ixys
irfp460.pdf
MegaMOSTM IRFP 460 VDSS = 500 V Power MOSFET ID(cont) = 20 A RDS(on) = 0.27 N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C20 A G = Gate, D = Drain, IDM TC = 25 C, pulse wi... See More ⇒
..6. Size:1838K cn vbsemi
irfp460pbf.pdf
IRFP460PBF www.VBsemi.tw N-Channel 500V(D-S) Super Junction Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.080 Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 350 Ruggedness Qgs (nC) 85 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 180 and Current ... See More ⇒
..7. Size:794K cn minos
irfp460.pdf
Silicon N-Channel Power MOSFET Description IRFP460 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =500V, R ... See More ⇒
..8. Size:234K inchange semiconductor
irfp460.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP460 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a... See More ⇒
0.1. Size:205K international rectifier
irfp460lcpbf.pdf
PD - 94902 IRFP460LCPbF Lead-Free 12/19/03 Document Number 91235 www.vishay.com 1 IRFP460LCPbF Document Number 91235 www.vishay.com 2 IRFP460LCPbF Document Number 91235 www.vishay.com 3 IRFP460LCPbF Document Number 91235 www.vishay.com 4 IRFP460LCPbF Document Number 91235 www.vishay.com 5 IRFP460LCPbF Document Number 91235 www.vishay.com 6 IRFP460LCPbF Docu... See More ⇒
0.2. Size:154K international rectifier
irfp460lc.pdf
PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional... See More ⇒
0.3. Size:206K international rectifier
irfp460apbf.pdf
PD- 94853 SMPS MOSFET IRFP460APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.27 20A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanc... See More ⇒
0.4. Size:115K international rectifier
irfp460as.pdf
PD-94011A SMPS MOSFET IRFP460AS HEXFET Power MOSFET Applications SMPS, UPS, Welding and High Speed VDSS Rds(on) max ID Power Switching 500V 0.27 20A Benefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mounting Description Third ... See More ⇒
0.5. Size:94K international rectifier
irfp460n.pdf
PD-94098 SMPS MOSFET IRFP460N HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current ... See More ⇒
0.6. Size:161K international rectifier
irfp460npbf.pdf
PD-94809 SMPS MOSFET IRFP460NPbF HEXFET Power MOSFET Applications Switch Mode Power Supply ( SMPS ) VDSS Rds(on) max ID Uninterruptable Power Supply 500V 0.24 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Character... See More ⇒
0.7. Size:172K international rectifier
irfp460p.pdf
PD-93946A IRFP460P Dynamic dv/dt Rating HEXFET Power MOSFET Repetitive Avalanche Rated D Isolated Central Mounting Hole VDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27 G Solder Plated for Reflowing ID = 20A Description S Third Generation HEXFET s from International Rectifier provide the designer with the best combination of f... See More ⇒
0.8. Size:95K international rectifier
irfp460a.pdf
PD- 91880 SMPS MOSFET IRFP460A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current... See More ⇒
0.9. Size:770K fairchild semi
irfp460c.pdf
February 2002 IRFP460C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.24 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 130nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to ... See More ⇒
0.10. Size:158K vishay
irfp460n irfp460npbf irfp460n sihfp460n sihfp460n.pdf
IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 124 COMPLIANT Ruggedness Qgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 57 Configura... See More ⇒
0.11. Size:183K vishay
irfp460b sihg460b.pdf
IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.25 - Low Input Capacitance (Ciss) Qg max. (nC) 170 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 28 - Avalanche Energy Rate... See More ⇒
0.12. Size:180K vishay
irfp460a sihfp460a.pdf
IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 105 COMPLIANT Ruggedness Qgs (nC) 26 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 42 and Current Configurat... See More ⇒
0.13. Size:1124K vishay
irfp460lc sihfp460lc.pdf
IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.27 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 32 Isolated Central Mounting Hole Qgd (nC) 49 Dynamic dV/dt Rating Configuratio... See More ⇒
0.14. Size:1133K infineon
irfp460lc sihfp460lc.pdf
IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.27 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 32 Isolated Central Mounting Hole Qgd (nC) 49 Dynamic dV/dt Rating Configuratio... See More ⇒
0.15. Size:375K inchange semiconductor
irfp460b.pdf
isc N-Channel MOSFET Transistor IRFP460B FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
0.16. Size:212K inchange semiconductor
irfp460apbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP460APBF FEATURES With TO-247 packaging Uninterruptible power supply High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So... See More ⇒
Detailed specifications: IRFP448, IRFP450, IRFP450A, IRFP450FI, IRFP450LC, IRFP451, IRFP452, IRFP453, BS170, IRFP460A, IRFP460LC, IRFP470, IRFP9130, IRFP9131, IRFP9132, IRFP9133, IRFP9140
Keywords - IRFP460 MOSFET specs
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