All MOSFET. IRFP460 Datasheet

 

IRFP460 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP460

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 280 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Package: TO3P

IRFP460 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFP460 Datasheet (PDF)

1.1. irfp460.pdf Size:91K _st

IRFP460
IRFP460

IRFP460 ? N - CHANNEL 500V - 0.22 ? - 20 A - TO-247 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRFP460 500 V < 0.27 ? 20 A TYPICAL R = 0.22 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 2 This power MOSFET is designed using the 1 company’s consolidated strip layout-based MESH TO-247 OVERLAY proc

1.2. irfp460c.pdf Size:770K _fairchild_semi

IRFP460
IRFP460

February 2002 IRFP460C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 20A, 500V, RDS(on) = 0.24? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 130nC) planar stripe, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to • Fast switching

1.3. irfp460n.pdf Size:94K _international_rectifier

IRFP460
IRFP460

PD-94098 SMPS MOSFET IRFP460N HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24? 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current TO-24

1.4. irfp460.pdf Size:873K _international_rectifier

IRFP460
IRFP460

PD - 94901 IRFP460PbF • Lead-Free 12/19/03 Document Number: 91237 www.vishay.com 1 IRFP460PbF Document Number: 91237 www.vishay.com 2 IRFP460PbF Document Number: 91237 www.vishay.com 3 IRFP460PbF Document Number: 91237 www.vishay.com 4 IRFP460PbF Document Number: 91237 www.vishay.com 5 IRFP460PbF Document Number: 91237 www.vishay.com 6 IRFP460PbF TO-247AC Package Outlin

1.5. irfp460apbf.pdf Size:206K _international_rectifier

IRFP460
IRFP460

PD- 94853 SMPS MOSFET IRFP460APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.27? 20A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Vol

1.6. irfp460lcpbf.pdf Size:205K _international_rectifier

IRFP460
IRFP460

PD - 94902 IRFP460LCPbF • Lead-Free 12/19/03 Document Number: 91235 www.vishay.com 1 IRFP460LCPbF Document Number: 91235 www.vishay.com 2 IRFP460LCPbF Document Number: 91235 www.vishay.com 3 IRFP460LCPbF Document Number: 91235 www.vishay.com 4 IRFP460LCPbF Document Number: 91235 www.vishay.com 5 IRFP460LCPbF Document Number: 91235 www.vishay.com 6 IRFP460LCPbF Document

1.7. irfp460lc.pdf Size:154K _international_rectifier

IRFP460
IRFP460

PD - 9.1232 IRFP460LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27? Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

1.8. irfp460as.pdf Size:115K _international_rectifier

IRFP460
IRFP460

PD-94011A SMPS MOSFET IRFP460AS HEXFET® Power MOSFET Applications SMPS, UPS, Welding and High Speed VDSS Rds(on) max ID Power Switching 500V 0.27? 20A Benefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mounting Description Third Genera

1.9. irfp460a.pdf Size:95K _international_rectifier

IRFP460
IRFP460

PD- 91880 SMPS MOSFET IRFP460A HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27? 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D

1.10. irfp460p.pdf Size:174K _international_rectifier

IRFP460
IRFP460

PD-93946A IRFP460P Dynamic dv/dt Rating HEXFET® Power MOSFET Repetitive Avalanche Rated D Isolated Central Mounting Hole VDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27? G Solder Plated for Reflowing ID = 20A Description S Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast sw

1.11. irfp460npbf.pdf Size:161K _international_rectifier

IRFP460
IRFP460

PD-94809 SMPS MOSFET IRFP460NPbF HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) VDSS Rds(on) max ID Uninterruptable Power Supply 500V 0.24? 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized C

1.12. irfp460a_sihfp460a.pdf Size:180K _vishay

IRFP460
IRFP460

IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.27 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 105 COMPLIANT Ruggedness Qgs (nC) 26 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 42 and Current Configuration Single

1.13. irfp460n_sihfp460n.pdf Size:158K _vishay

IRFP460
IRFP460

IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.24 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 124 COMPLIANT Ruggedness Qgs (nC) 40 • Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 57 Configuration Singl

1.14. irfp460_sihfp460.pdf Size:156K _vishay

IRFP460
IRFP460

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.27 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 29 Qgd (nC) 110 • Ease of Paralleling Configuration Single • Simple Drive Requirements D • Lead (Pb)-free Avail

1.15. irfp460lc_sihfp460lc.pdf Size:1124K _vishay

IRFP460
IRFP460

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 500 • Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.27 • Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT • Reduced Ciss, Coss, Crss Qgs (nC) 32 • Isolated Central Mounting Hole Qgd (nC) 49 • Dynamic dV/dt Rating Configuration Single • Repe

1.16. irfp460.pdf Size:77K _ixys

IRFP460
IRFP460

MegaMOSTM IRFP 460 VDSS = 500 V Power MOSFET ID(cont) = 20 A ? RDS(on) = 0.27? ? ? ? N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 500 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C20 A G = Gate, D = Drain, IDM TC = 25°C, pulse width limited by TJM 80 A

Datasheet: IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 , IRFP452 , IRFP453 , IRFB4227 , IRFP460A , IRFP460LC , IRFP470 , IRFP9130 , IRFP9131 , IRFP9132 , IRFP9133 , IRFP9140 .

 


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