IPA80R310CE Specs and Replacement
Type Designator: IPA80R310CE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ -
Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: TO-220F
- MOSFET ⓘ Cross-Reference Search
IPA80R310CE datasheet
..1. Size:1045K infineon
ipa80r310ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R310CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPA80R310CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performan... See More ⇒
..2. Size:201K inchange semiconductor
ipa80r310ce.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA80R310CE FEATURES With TO-220F packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc... See More ⇒
7.1. Size:1167K infineon
ipa80r360p7.pdf 
IPA80R360P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒
8.1. Size:1052K infineon
ipa80r460ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R460CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPA80R460CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performan... See More ⇒
8.2. Size:1179K infineon
ipa80r1k2p7.pdf 
IPA80R1K2P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒
8.3. Size:1137K infineon
ipa80r600p7.pdf 
IPA80R600P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒
8.4. Size:1042K infineon
ipa80r1k0ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R1K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPA80R1K0CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performan... See More ⇒
8.5. Size:1153K infineon
ipa80r900p7.pdf 
IPA80R900P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒
8.6. Size:1047K infineon
ipa80r1k4ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPA80R1K4CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performan... See More ⇒
8.7. Size:1067K infineon
ipa80r650ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R650CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPA80R650CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performan... See More ⇒
8.8. Size:1137K infineon
ipa80r750p7.pdf 
IPA80R750P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒
8.9. Size:1151K infineon
ipa80r280p7.pdf 
IPA80R280P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒
8.10. Size:1182K infineon
ipa80r1k4p7.pdf 
IPA80R1K4P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒
8.11. Size:1123K infineon
ipa80r450p7.pdf 
IPA80R450P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒
8.12. Size:201K inchange semiconductor
ipa80r460ce.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA80R460CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
8.13. Size:201K inchange semiconductor
ipa80r1k0ce.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA80R1K0CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
8.14. Size:201K inchange semiconductor
ipa80r1k4ce.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA80R1K4CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
8.15. Size:201K inchange semiconductor
ipa80r650ce.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA80R650CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
Detailed specifications: IPB015N08N5, IPB015N04L, IPB014N06N, IPB011N04L, IPB010N06N, IPB009N03L, IPA80R650CE, IPA80R460CE, IRF640, IPA80R1K4CE, IPA80R1K0CE, IPA65R650CE, IPA65R420CFD, IPA65R310CFD, IPA65R225C7, IPA65R190E6, IPA65R190CFD
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