All MOSFET. IPA65R190C6 Datasheet

 

IPA65R190C6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPA65R190C6
   Marking Code: 65C6190
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 20.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-220F

 IPA65R190C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPA65R190C6 Datasheet (PDF)

 ..1. Size:2212K  infineon
 ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf

IPA65R190C6 IPA65R190C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R190C6 Data SheetRev. 2.0, 2011-05-09Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6IPI65R190C6, IPP65R190C6IPW65R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 ..2. Size:201K  inchange semiconductor
 ipa65r190c6.pdf

IPA65R190C6 IPA65R190C6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R190C6FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 4.1. Size:6482K  infineon
 ipa65r190cfd ipb65r190cfd ipi65r190cfd ipp65r190cfd ipw65r190cfd.pdf

IPA65R190C6 IPA65R190C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6/CFD 650V650V CoolMOS C6 CFD Power TransistorIPx65R190CFD Data Sheet Data SheetRev. 2.2FinalIndustrial & MultimarketIPW65R190CFD , IPB65R190CFD , IPP65R190CFDIPA65R190CFD , IPI65R190CFD650V CoolMOS C6 CFD Power TransistorTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology fo

 4.2. Size:747K  infineon
 ipa65r190c7.pdf

IPA65R190C6 IPA65R190C6

IPA65R190C7MOSFETPG-TO 220 FP650V CoolMOS C7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation. The product portfolioprovides all benefits of fas

 4.3. Size:201K  inchange semiconductor
 ipa65r190cfd.pdf

IPA65R190C6 IPA65R190C6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R190CFDFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 4.4. Size:201K  inchange semiconductor
 ipa65r190c7.pdf

IPA65R190C6 IPA65R190C6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R190C7FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top