IPA50R280CE MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA50R280CE
Marking Code: 5R280CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 49 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO-220F
IPA50R280CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPA50R280CE Datasheet (PDF)
ipa50r280ce.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R280CEData SheetRev. 2.2FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R280CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp
ipa50r280ce.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R280CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r299cp.pdf
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IPA50R299CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @Tjmax 550 V!0 V )DL:HI ;>I / M . C6CI 1, #-0)V . J6>A;>:9 688DG9>C 01>53:10 2;=V %6G9 6C9 HD;IHL>I8=>C
ipa50r250cp.pdf
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IPA50R250CPCIMOSTM$;B1='=-:>5>?;=$=;0@/?&@99-=DFeatures @Tjmax 550 V"1X*FNLI
ipa50r299cp.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R299CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r250cp.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R250CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
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