IPA50R280CE Specs and Replacement
Type Designator: IPA50R280CE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 49 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO-220F
IPA50R280CE substitution
- MOSFET ⓘ Cross-Reference Search
IPA50R280CE datasheet
ipa50r280ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R280CE Data Sheet Rev. 2.2 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R280CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒
ipa50r280ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R280CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
ipa50r299cp.pdf
IPA50R299CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL HI ;>I / M . C6CI 1, #- 0) V . J6>A;> 9 688DG9>C 01>53 10 2;= V %6G9 6C9 HD;IHL>I8=>C... See More ⇒
Detailed specifications: IPA60R190P6, IPA60R160P6, IPA60R125P6, IPA60R099P6, IPA50R950CE, IPA50R800CE, IPA50R650CE, IPA50R500CE, 12N60, IPA50R190CE, IPA105N15N3, IPA083N10N5, IPA075N15N3, IPA060N06N, IPA041N04NG, IPA040N06N, IPA029N06N
Keywords - IPA50R280CE MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FQB9N50TM | IPA060N06N
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