IPA50R190CE Specs and Replacement
Type Designator: IPA50R190CE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 68 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-220F
IPA50R190CE substitution
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IPA50R190CE datasheet
ipa50r190ce ipp50r190ce ipw50r190ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R190CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPW50R190CE, IPP50R190CE, IPA50R190CE TO-247 TO-220 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the s... See More ⇒
ipa50r190ce.pdf
IPA50R190CE MOSFET PG-TO 220 FP 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting h... See More ⇒
ipa50r190ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R190CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
Detailed specifications: IPA60R160P6, IPA60R125P6, IPA60R099P6, IPA50R950CE, IPA50R800CE, IPA50R650CE, IPA50R500CE, IPA50R280CE, 5N65, IPA105N15N3, IPA083N10N5, IPA075N15N3, IPA060N06N, IPA041N04NG, IPA040N06N, IPA029N06N, IRFP4004PBF
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