All MOSFET. IRFP9143 Datasheet

 

IRFP9143 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP9143

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO3P

IRFP9143 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP9143 Datasheet (PDF)

3.1. irfp9140npbf.pdf Size:236K _upd-mosfet

IRFP9143
IRFP9143

PD - 95665 IRFP9140NPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = -100V l P-Channel l Fast Switching RDS(on) = 0.117Ω l Fully Avalanche Rated G l Lead-Free ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

3.2. irfp9140pbf.pdf Size:1478K _upd-mosfet

IRFP9143
IRFP9143

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = - 10 V 0.20 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 61 • Isolated Central Mounting Hole Qgs (nC) 14 • 175 °C Operating Temperature Qgd (nC) 29 • Fast Switching Configuration Single • Ease of

 3.3. irfp9140.pdf Size:165K _international_rectifier

IRFP9143
IRFP9143

3.4. irfp9140n.pdf Size:142K _international_rectifier

IRFP9143
IRFP9143

PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature P-Channel RDS(on) = 0.117? Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

 3.5. irfp9140pbf.pdf Size:1757K _international_rectifier

IRFP9143
IRFP9143

PD-95991 IRFP9140PbF Lead-Free 12/22/04 Document Number: 91238 www.vishay.com 1 IRFP9140PbF Document Number: 91238 www.vishay.com 2 IRFP9140PbF Document Number: 91238 www.vishay.com 3 IRFP9140PbF Document Number: 91238 www.vishay.com 4 IRFP9140PbF Document Number: 91238 www.vishay.com 5 IRFP9140PbF Document Number: 91238 www.vishay.com 6 IRFP9140PbF Peak Diode Recover

3.6. irfp9140-43 irf9540-43.pdf Size:378K _samsung

IRFP9143
IRFP9143



3.7. irfp9140 sihfp9140.pdf Size:1444K _vishay

IRFP9143
IRFP9143

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of Paralleling S Lead (Pb)-

3.8. irfp9140n.pdf Size:241K _inchange_semiconductor

IRFP9143
IRFP9143

isc P-Channel MOSFET Transistor IRFP9140N,IIRFP9140N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.117Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and

Datasheet: IRFP9130 , IRFP9131 , IRFP9132 , IRFP9133 , IRFP9140 , IRFP9140N , IRFP9141 , IRFP9142 , BUZ10 , IRFP9150 , IRFP9230 , IRFP9231 , IRFP9232 , IRFP9233 , IRFP9240 , IRFP9241 , IRFP9242 .

 

 
Back to Top