All MOSFET. FCA20N60S Datasheet

 

FCA20N60S MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCA20N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 57 nC
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 960 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO-3P

 FCA20N60S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCA20N60S Datasheet (PDF)

 ..1. Size:750K  fairchild semi
 fca20n60s fca20n60s f109.pdf

FCA20N60S FCA20N60S

August 2007TMSuperFETFCA20N60S / FCA20N60S_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Farichilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.22balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perform

 6.1. Size:971K  fairchild semi
 fch20n60 fca20n60 fca20n60 f109.pdf

FCA20N60S FCA20N60S

December 2008TMSuperFETFCH20N60 / FCA20N60 / FCA20N60_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate cha

 6.2. Size:952K  fairchild semi
 fca20n60f fca20n60fs.pdf

FCA20N60S FCA20N60S

December 2008 TMSuperFETFCA20N60F 600V N-CHANNEL FRFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

 6.3. Size:481K  fairchild semi
 fca20n60 fca20n60 f109.pdf

FCA20N60S FCA20N60S

August 2014FCA20N60N-Channel SuperFET MOSFET600 V, 20 A, 190 mFeatures DescriptionSuperFET MOSFET is Fairchild Semiconductors first genera- 650V @ TJ = 150Ction of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 150 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 75 nC )resistance an

 6.4. Size:942K  onsemi
 fca20n60.pdf

FCA20N60S FCA20N60S

FCA20N60N-Channel SuperFET MOSFET600 V, 20 A, 190 mDescriptionSuperFET MOSFET is ON Semiconductors first genera-tion Featuresof high voltage super-junction (SJ) MOSFET family that is 650V @ TJ = 150C utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology Typ. RDS(on) = 150 mis tailored to

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SI4483ADY | UPA1919 | QM6008U

 

 
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