FDB14AN06LA0 Datasheet and Replacement. Cross Reference Search

FDB14AN06LA0 Datasheet (PDF)

..1. Size:247K fairchild semi
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January 2004FDB14AN06LA0 / FDP14AN06LA0N-Channel PowerTrench MOSFET60V, 60A, 14.6mFeatures Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pu

0.1. Size:784K onsemi
fdb14an06la0-f085.pdf pdf_icon

FDB14AN06LA0-F085 N-Channel PowerTrench MOSFET 60V, 60A, 14.6mFeaturesApplications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conver

4.1. Size:300K fairchild semi
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December 2010FDB14AN06LA0_F085 N-Channel PowerTrench MOSFET60V, 60A, 14.6mFeatures Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

9.1. Size:445K fairchild semi
fdb14n30.pdf pdf_icon

February 2007TMUniFETFDB14N30 300V N-Channel MOSFETFeatures Description 14A, 300V, RDS(on) = 0.29 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 18 nC)stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tailored

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .