FDB14AN06LA0 Specs and Replacement

Type Designator: FDB14AN06LA0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 67 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 169 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: TO-263AB

FDB14AN06LA0 substitution

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FDB14AN06LA0 datasheet

 ..1. Size:247K  fairchild semi
 fdb14an06la0 fdp14an06la0.pdf pdf_icon

FDB14AN06LA0

January 2004 FDB14AN06LA0 / FDP14AN06LA0 N-Channel PowerTrench MOSFET 60V, 60A, 14.6m Features Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pu... See More ⇒

 0.1. Size:784K  onsemi
 fdb14an06la0-f085.pdf pdf_icon

FDB14AN06LA0

FDB14AN06LA0-F085 N-Channel PowerTrench MOSFET 60V, 60A, 14.6m Features Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conver... See More ⇒

 4.1. Size:300K  fairchild semi
 fdb14an06l f085.pdf pdf_icon

FDB14AN06LA0

December 2010 FDB14AN06LA0_F085 N-Channel PowerTrench MOSFET 60V, 60A, 14.6m Features Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) ... See More ⇒

 9.1. Size:445K  fairchild semi
 fdb14n30.pdf pdf_icon

FDB14AN06LA0

February 2007 TM UniFET FDB14N30 300V N-Channel MOSFET Features Description 14A, 300V, RDS(on) = 0.29 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 18 nC) stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored ... See More ⇒

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Detailed specifications: FDA2712, FDA62N28, FDA75N28, FDA79N15, FDAF59N30, FDAF62N28, FDAF69N25, FDAF75N28, 5N65, FDB20AN06A0, FDB24AN06LA0, FDB2570, FDB2670, FDB3672, FDB42AN15A0, FDB44N25TM, FDB52N20TM

Keywords - FDB14AN06LA0 MOSFET specs

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