FDC699P Specs and Replacement
Type Designator: FDC699P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 560 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SSOT-6
FDC699P substitution
- MOSFET ⓘ Cross-Reference Search
FDC699P datasheet
fdc699p fdc699p f077.pdf
January 2004 FDC699P P-Channel 2.5V PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged 7 A, 20 V RDS(ON) = 22 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 30 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a wide range of g... See More ⇒
fdc697p fdc697p f077.pdf
January 2004 FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 8 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V Fairchild s advanced low voltage Power Trench RDS(ON) = 25 m @ VGS = 2.5 V process. It has been optimized for battery power RDS(ON) = 35 m @ VGS = 1.8 V management applications. ... See More ⇒
fdc697p.pdf
January 2004 FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 8 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V Fairchild s advanced low voltage Power Trench RDS(ON) = 25 m @ VGS = 2.5 V process. It has been optimized for battery power RDS(ON) = 35 m @ VGS = 1.8 V management applications. ... See More ⇒
Detailed specifications: FDC5612F095, FDC6020C, FDC602PF095, FDC633NF095, FDC640PF095, FDC645NF095, FDC697P, FDC697PF077, AON7403, FDC699PF077, FDC796N, FDC796NF077, FDD044AN03L, FDD068AN03L, FDD107AN06LA0, FDD10N20LZTM, FDD14AN06LA0
Keywords - FDC699P MOSFET specs
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