FDC699P Datasheet and Replacement
Type Designator: FDC699P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 560 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SSOT-6
FDC699P substitution
FDC699P Datasheet (PDF)
fdc699p fdc699p f077.pdf

January 2004 FDC699P P-Channel 2.5V PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged 7 A, 20 V RDS(ON) = 22 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 30 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a wide range of g
fdc697p fdc697p f077.pdf

January 2004 FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 8 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V Fairchilds advanced low voltage Power TrenchRDS(ON) = 25 m @ VGS = 2.5 V process. It has been optimized for battery power RDS(ON) = 35 m @ VGS = 1.8 V management applications.
fdc697p.pdf

January 2004 FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 8 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V Fairchilds advanced low voltage Power TrenchRDS(ON) = 25 m @ VGS = 2.5 V process. It has been optimized for battery power RDS(ON) = 35 m @ VGS = 1.8 V management applications.
Datasheet: FDC5612F095 , FDC6020C , FDC602PF095 , FDC633NF095 , FDC640PF095 , FDC645NF095 , FDC697P , FDC697PF077 , EMB04N03H , FDC699PF077 , FDC796N , FDC796NF077 , FDD044AN03L , FDD068AN03L , FDD107AN06LA0 , FDD10N20LZTM , FDD14AN06LA0 .
History: BUZ103SL | NCEP026N10T
Keywords - FDC699P MOSFET datasheet
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FDC699P equivalent finder
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FDC699P substitution
FDC699P replacement
History: BUZ103SL | NCEP026N10T



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