FDD5N60NZTM Datasheet and Replacement. Cross Reference Search

..1. Size:235K fairchild semi
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December 2010TMUniFET-IIFDD5N60NZN-Channel MOSFET600V, 4.0A, 2Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2.0A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 10nC)technology. Low Crss ( Typ. 5pF) This advance technology has been e

5.1. Size:630K fairchild semi
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November 2013FDD5N60NZN-Channel UniFETTM II MOSFET600 V, 4.0 A, 2 Features Description RDS(on) = 1.65 (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 10 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 5 pF)on-stat

9.1. Size:645K fairchild semi
fdd5n50u.pdf pdf_icon

December 2007TMUltra FRFETFDD5N50UtmN-Channel MOSFET, FRFET 500V, 3A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC)DOMS technology. Low Crss ( Typ. 5pF)This advance technology h

9.2. Size:752K fairchild semi
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December 2007UniFETTMFDD5N50FtmN-Channel MOSFET, FRFET 500V, 3.5A, 1.55Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has

9.3. Size:503K fairchild semi
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December 2007UniFETTMFDD5N50tmN-Channel MOSFET 500V, 4A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been especiall

9.4. Size:548K fairchild semi
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November 2009UniFET-IITMFDD5N50NZN-Channel MOSFET 500V, 4A, 1.5Features Description RDS(on) = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC)stripe, DMOS technology. Low Crss ( Typ. 4pF)This advance technology has been especially

9.5. Size:564K fairchild semi
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November 2009UniFET-IITMFDD5N50NZFN-Channel MOSFET 500V, 3.7A, 1.75Features Description RDS(on) = 1.47 ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC)stripe, DMOS technology. Low Crss ( Typ. 4pF)This advance technology has been esp

9.6. Size:244K fairchild semi
fdd5n53 fdu5n53.pdf pdf_icon

January 2009UniFETTMFDD5N53/FDU5N53tmN-Channel MOSFET 530V, 4A, 1.5Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been espe

9.7. Size:833K onsemi
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FDD5N50UN-Channel UniFETTM Ultra FRFETTM MOSFET500 V, 3 A, 2.0 DescriptionFeaturesUniFETTM MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. RDS(on) = 1.65 (Typ.) @ VGS = 10 V, ID = 1.5 AThis MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 11 nC) provide better switching performance

9.8. Size:841K onsemi
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FDD5N50N-Channel UniFETTM MOSFETDescription500 V, 4 A, 1.4 UniFETTM MOSFET is ON Semiconductors high voltage FeaturesMOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2 Aprovide better switching performance and higher avalanche Low Gate Charge (Typ.

9.9. Size:765K onsemi
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FDD5N50FTM-WSN-Channel UniFETTM FRFET MOSFET 500 V, 3.5 A, 1.55 DescriptionFeaturesUniFETTM MOSFET is ON Semiconductors high voltage RDS(on) = 1.25 (Typ.) @ VGS = 10 V, ID = 1.75 A MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 11 nC)provide better switching performa

9.10. Size:713K onsemi
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.11. Size:1732K onsemi
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